CP336V-2N5551-CT

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Mfr.Part #
CP336V-2N5551-CT
Manufacturer
Central Semiconductor
Package / Case
Die
Datasheet
Download
Description
TRANS NPN 160V 0.6A DIE 1=400
Stock
34,373
In Stock :
34,373

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Manufacturer :
Central Semiconductor
Product Category :
Transistors - Bipolar (BJT) - Single
Mounting Type :
Surface Mount
Transistor Type :
NPN
Mount :
Surface Mount
Package / Case :
Die
Vce Saturation (Max) @ Ib, Ic :
200mV @ 5mA, 50mA
Packaging :
Tray
DC Current Gain (hFE) (Min) @ Ic, Vce :
80 @ 10mA 5V
Collector Emitter Breakdown Voltage :
160V
Supplier Device Package :
Die
Voltage - Collector Emitter Breakdown (Max) :
160V
Current - Collector Cutoff (Max) :
50nA ICBO
RoHS Status :
ROHS3 Compliant
Collector Emitter Voltage (VCEO) :
200mV
Max Collector Current :
600mA
Operating Temperature :
-65°C~150°C TJ
Factory Lead Time :
8 Weeks
Current - Collector (Ic) (Max) :
600mA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Frequency - Transition :
300MHz
Datasheets
CP336V-2N5551-CT
Introducing Transistors - Bipolar (BJT) - Single Central Semiconductor CP336V-2N5551-CT from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:Die, Operating Temperature:-65°C~150°C TJ, CP336V-2N5551-CT pinout, CP336V-2N5551-CT datasheet PDF, CP336V-2N5551-CT amp .Beyond Transistors - Bipolar (BJT) - Single Central Semiconductor CP336V-2N5551-CT ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Central Semiconductor CP336V-2N5551-CT


NPN -65°C~150°C TJ 50nA ICBO Die Tray Surface Mount

CP336V-2N5551-CT Overview


In this device, the DC current gain is 80 @ 10mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 200mV @ 5mA, 50mA.Product comes in the supplier's device package Die.There is a 160V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible for the collector current to fall as low as 600mA volts at Single BJT transistors maximum.

CP336V-2N5551-CT Features


the DC current gain for this device is 80 @ 10mA 5V
the vce saturation(Max) is 200mV @ 5mA, 50mA
the supplier device package of Die


CP336V-2N5551-CT Applications


There are a lot of Central Semiconductor Corp
CP336V-2N5551-CT applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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