CP127-2N6301-CT5
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- Mfr.Part #
- CP127-2N6301-CT5
- Manufacturer
- Central Semiconductor
- Package / Case
- Die
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 8A DIE 1=5PCS
- Stock
- 13
- In Stock ：
- 13
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- Manufacturer :
- Central Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 80V
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 500μA
- Frequency - Transition :
- 4MHz
- Voltage - Collector Emitter Breakdown (Max) :
- 80V
- Packaging :
- Tray
- Mounting Type :
- Surface Mount
- Supplier Device Package :
- Die
- Package / Case :
- Die
- Transistor Type :
- NPN - Darlington
- Operating Temperature :
- -65°C~200°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 4A 3V
- Published :
- 2013
- Collector Emitter Voltage (VCEO) :
- 3V
- Factory Lead Time :
- 10 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 80mA, 8A
- Max Collector Current :
- 8A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector (Ic) (Max) :
- 8A
- Datasheets
- CP127-2N6301-CT5
NPN - Darlington -65°C~200°C TJ 500μA Die Tray Surface Mount
CP127-2N6301-CT5 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 750 @ 4A 3V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3V @ 80mA, 8A.The product comes in the supplier device package of Die.A 80V maximal voltage - Collector Emitter Breakdown is present in the device.Collector current can be as low as 8A volts at its maximum.
CP127-2N6301-CT5 Features
the DC current gain for this device is 750 @ 4A 3V
the vce saturation(Max) is 3V @ 80mA, 8A
the supplier device package of Die
CP127-2N6301-CT5 Applications
There are a lot of Central Semiconductor Corp
CP127-2N6301-CT5 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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