CG2H30070F

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Mfr.Part #
CG2H30070F
Manufacturer
Wolfspeed
Package / Case
Datasheet
Download
Description
RF MOSFET HEMT 28V
Stock
258
In Stock :
258

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Manufacturer :
Wolfspeed
Product Category :
Transistors - FETs, MOSFETs - RF
Moisture Sensitivity Level (MSL) :
Not Applicable
Factory Lead Time :
8 Weeks
Published :
2017
Transistor Type :
HEMT
Power - Output :
75W
Voltage - Test :
28V
Series :
GaN
Datasheets
CG2H30070F
Introducing Transistors - FETs, MOSFETs - RF Wolfspeed CG2H30070F from Chip IC,where excellence meets affordability. This product stands out with its CG2H30070F pinout, CG2H30070F datasheet PDF, CG2H30070F amp .Beyond Transistors - FETs, MOSFETs - RF Wolfspeed CG2H30070F ,we also offer BLF174XR,112, BLF2425M9L30U, BLF183XRU, Our vast inventory has you covered. Contact us now for immediate solutions.

Wolfspeed CG2H30070F


CG2H30070F datasheet pdf and Transistors - FETs, MOSFETs - RF product details from Cree/Wolfspeed stock available at

CG2H30070F Description


The CG2H30070F is a Radar Product, CW & Pulsed. The GaN HEMT devices from Wolfspeed are excellent for CW and pulsed applications. The L, S, C, and X-Band applications are catered for by the packed discrete GaN HEMT devices. The L, C, S, and X bands are intended for use with the GaN HEMT MMIC 50-ohm amplifiers. We have a large selection of high-efficiency GaN HEMT transistors and amplifiers in our portfolio that operate at 28 V, 40 V, and 50 V for pulsed-through CW applications.



CG2H30070F Features


  • High power density

  • High-frequency operation

  • High breakdown voltage

  • GaN-on-SiC technology

  • Wide-band performance

  • Reduction of heat-sink requirements

  • SiC substrate provides the best thermal performance

  • High reliability

  • Higher efficiency



CG2H30070F Applications


  • GaN HEMT Transistors & MMICs for L, S, C and X-Band Applications


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Shipping Method

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Shipping Cost

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The basic freight (for package ≤0.5 KG ) depends on the time zones and countries

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