BYVB32-100-E3/45

Manufacturer :

Vishay

Product Category :

Diodes - Rectifiers - Arrays

Diode Element Material :

SILICON

Number of Elements :

2

Element Configuration :

Common Cathode

Length :

10.45mm

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Form :

Gull wing

Max Forward Surge Current (Ifsm) :

150A

JESD-609 Code :

e3

Peak Reverse Current :

10μA

Contact Plating :

Tin

Published :

2008

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Diode Configuration :

1 Pair Common Cathode

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Operating Temperature :

150°C

HTS Code :

8541.10.00.80

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Min Operating Temperature :

-65°C

Reverse Voltage :

100V

Width :

9.14mm

Average Rectified Current :

18A

Terminal Position :

Single

Peak Non-Repetitive Surge Current :

150A

Diode Type :

Standard

Packaging :

Tube

Number of Phases :

1

Additional Feature :

FREE WHEELING DIODE

Recovery Time :

25 ns

Base Part Number :

BYVB32-100

Max Reverse Voltage (DC) :

100V

Max Repetitive Reverse Voltage (Vrrm) :

100V

Current - Reverse Leakage @ Vr :

10μA @ 100V

Output Current-Max :

9A

Operating Temperature - Junction :

-65°C~150°C

Max Surge Current :

150A

JESD-30 Code :

R-PSSO-G2

Height :

4.83mm

Reverse Recovery Time :

25 ns

Number of Pins :

3

Forward Voltage :

1.15V

Pin Count :

3

Mount :

Surface Mount

Factory Lead Time :

27 Weeks

Mounting Type :

Surface Mount

Forward Current :

18A

Application :

EFFICIENCY

ECCN Code :

EAR99

Number of Terminations :

2

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

245

Voltage - Forward (Vf) (Max) @ If :

1.15V @ 20A