BUL642D2G
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- Mfr.Part #
- BUL642D2G
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 440V 3A TO220
- Stock
- 21,237
- In Stock ：
- 21,237
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 200mA, 2A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 200μA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Temperature :
- -65°C~150°C TJ
- Qualification Status :
- COMMERCIAL
- Package / Case :
- TO-220-3
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 16 @ 500mA 1V
- Polarity/Channel Type :
- NPN
- Pin Count :
- 3
- Case Connection :
- COLLECTOR
- Frequency - Transition :
- 13MHz
- Terminal Position :
- Single
- Mounting Type :
- Through Hole
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Reach Compliance Code :
- Unknown
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- Voltage - Collector Emitter Breakdown (Max) :
- 440V
- Additional Feature :
- BUILT-IN EFFICIENT ANTISATURATION NETWORK
- JEDEC-95 Code :
- TO-220AB
- Packaging :
- Tube
- JESD-30 Code :
- R-PSFM-T3
- Current - Collector (Ic) (Max) :
- 3A
- Transistor Type :
- NPN
- Pbfree Code :
- yes
- Surface Mount :
- No
- Transition Frequency :
- 13MHz
- JESD-609 Code :
- e3
- Terminal Finish :
- MATTE TIN
- Power - Max :
- 75W
- Datasheets
- BUL642D2G
BUL642D2G Documents
NPN -65°C~150°C TJ 200μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
BUL642D2G Overview
This device has a DC current gain of 16 @ 500mA 1V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 1.5V @ 200mA, 2A means Ic has reached its maximum value(saturated).As you can see, the part has a transition frequency of 13MHz.Collector Emitter Breakdown occurs at 440VV - Maximum voltage.
BUL642D2G Features
the DC current gain for this device is 16 @ 500mA 1V
the vce saturation(Max) is 1.5V @ 200mA, 2A
a transition frequency of 13MHz
BUL642D2G Applications
There are a lot of Rochester Electronics, LLC
BUL642D2G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| BUL654 | onsemi | 15,985 | TRANS NPN 400V 12A TO220 |
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