BUL642D2G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

DC Current Gain (hFE) (Min) @ Ic, Vce :

16 @ 500mA 1V

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Collector (Ic) (Max) :

3A

Transition Frequency :

13MHz

Pin Count :

3

Number of Elements :

1

Frequency - Transition :

13MHz

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Power - Max :

75W

Terminal Position :

Single

Voltage - Collector Emitter Breakdown (Max) :

440V

Case Connection :

COLLECTOR

Current - Collector Cutoff (Max) :

200μA

Additional Feature :

BUILT-IN EFFICIENT ANTISATURATION NETWORK

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Packaging :

Tube

Package / Case :

TO-220-3

Terminal Finish :

MATTE TIN

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 200mA, 2A

Operating Temperature :

-65°C~150°C TJ

Qualification Status :

COMMERCIAL

JEDEC-95 Code :

TO-220AB

Polarity/Channel Type :

NPN

JESD-30 Code :

R-PSFM-T3

Number of Terminations :

3

Surface Mount :

No

Transistor Type :

NPN

Reach Compliance Code :

Unknown