BUK953R2-40E,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

SWITCHING

Published :

2012

Drain Current-Max (Abs) (ID) :

100A

Package / Case :

TO-220-3

Drain-source On Resistance-Max :

0.0032Ohm

Additional Feature :

AVALANCHE RATED

Operating Mode :

ENHANCEMENT MODE

Pin Count :

3

Power Dissipation-Max :

234W Tc

FET Type :

N-Channel

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

40V

Reference Standard :

AEC-Q101; IEC-60134

Packaging :

Tube

Vgs(th) (Max) @ Id :

2.1V @ 1mA

Reach Compliance Code :

not_compliant

DS Breakdown Voltage-Min :

40V

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

2.8m Ω @ 25A, 10V

Vgs (Max) :

±10V

Gate Charge (Qg) (Max) @ Vgs :

69.5nC @ 5V

Case Connection :

DRAIN

JEDEC-95 Code :

TO-220AB

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Surface Mount :

No

Input Capacitance (Ciss) (Max) @ Vds :

9150pF @ 25V

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

781A

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Series :

TrenchMOS™

Number of Elements :

1

JESD-30 Code :

R-PSFM-T3

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

419 mJ