BSR14
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- Mfr.Part #
- BSR14
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.8A SOT23-3
- Stock
- 14,496
- In Stock ：
- 14,496
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Max Junction Temperature (Tj) :
- 150°C
- Terminal Form :
- Gull wing
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Mounting Type :
- Surface Mount
- Voltage - Rated DC :
- 40V
- Current Rating :
- 800mA
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- REACH SVHC :
- No SVHC
- Weight :
- 30mg
- Pbfree Code :
- yes
- Height :
- 1.2mm
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- Termination :
- SMD/SMT
- Frequency :
- 300MHz
- JESD-609 Code :
- e3
- Terminal Position :
- Dual
- Number of Pins :
- 3
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Published :
- 2012
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 40V
- Emitter Base Voltage (VEBO) :
- 6V
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Factory Lead Time :
- 39 Weeks
- Operating Temperature :
- -55°C~150°C TJ
- Radiation Hardening :
- No
- Gain Bandwidth Product :
- 300MHz
- Length :
- 2.92mm
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Turn Off Time-Max (toff) :
- 285ns
- Max Breakdown Voltage :
- 40V
- hFE Min :
- 35
- Contact Plating :
- Tin
- Power Dissipation :
- 350mW
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 40V
- Max Power Dissipation :
- 350mW
- Base Part Number :
- BSR14
- Mount :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Transistor Application :
- SWITCHING
- Width :
- 1.3mm
- Max Collector Current :
- 800mA
- Transition Frequency :
- 300MHz
- Collector Base Voltage (VCBO) :
- 75V
- Polarity/Channel Type :
- NPN
- Collector Emitter Saturation Voltage :
- 1V
- Datasheets
- BSR14
NPN -55°C~150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BSR14 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 800mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 300MHz.Single BJT transistor can take a breakdown input voltage of 40V volts.During maximum operation, collector current can be as low as 800mA volts.
BSR14 Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 800mA
a transition frequency of 300MHz
BSR14 Applications
There are a lot of ON Semiconductor
BSR14 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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