BR25S640FJ-WE2

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Mfr.Part #
BR25S640FJ-WE2
Manufacturer
ROHM Semiconductor
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
IC EEPROM 64KBIT SPI 20MHZ 8SOPJ
Stock
2,923
In Stock :
2,923

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Manufacturer :
ROHM Semiconductor
Product Category :
Memory
Write Cycle Time-Max (tWC) :
5ms
Pbfree Code :
yes
Memory Size :
64Kb 8K x 8
Memory Width :
8
Terminal Pitch :
1.27mm
Height Seated (Max) :
1.475mm
Endurance :
1000000 Write/Erase Cycles
Memory Interface :
SPI
Number of Pins :
8
Mounting Type :
Surface Mount
Supply Voltage :
1.8V
RoHS Status :
ROHS3 Compliant
Terminal Position :
Dual
Voltage - Supply :
1.7V~5.5V
ECCN Code :
EAR99
Pin Count :
8
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Interface :
SPI, Serial
Standby Current-Max :
0.000002A
Data Retention Time-Min :
40
Memory Format :
EEPROM
Write Protection :
Hardware
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Lead Free :
Lead Free
Qualification Status :
Not Qualified
Number of Terminations :
8
Length :
4.9mm
Operating Temperature :
-40°C~85°C TA
Mount :
Surface Mount
Memory Type :
Non-Volatile
Published :
2005
Write Cycle Time - Word, Page :
5ms
Base Part Number :
BR25S640
Factory Lead Time :
16 Weeks
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Width :
3.9mm
Number of Functions :
1
Density :
64 kb
Clock Frequency :
20MHz
Supply Voltage-Max (Vsup) :
5.5V
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Supply Voltage-Min (Vsup) :
1.7V
Operating Mode :
SYNCHRONOUS
Packaging :
Tape and Reel (TR)
Serial Bus Type :
SPI
Datasheets
BR25S640FJ-WE2
Introducing Memory ROHM Semiconductor BR25S640FJ-WE2 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:8, Mounting Type:Surface Mount, Number of Terminations:8, Operating Temperature:-40°C~85°C TA, Base Part Number:BR25S640, Package / Case:8-SOIC (0.154, 3.90mm Width), BR25S640FJ-WE2 pinout, BR25S640FJ-WE2 datasheet PDF, BR25S640FJ-WE2 amp .Beyond Memory ROHM Semiconductor BR25S640FJ-WE2 ,we also offer AT25SF081B-SSHB-T, AT25SF041B-SSHB-T, AT25SF041B-SHB-T, Our vast inventory has you covered. Contact us now for immediate solutions.

ROHM Semiconductor BR25S640FJ-WE2


Memory ROHM Semiconductor BR25S640FJ-WE2 Overview

The ROHM Semiconductor BR25S640FJ-WE2 is a high-performance EEPROM (Electrically Erasable Programmable Read-Only Memory) IC that offers a robust storage solution for advanced applications in a compact 8SOPJ package. Engineered to support a SPI interface with a clock frequency of up to 20MHz, this memory chip provides efficient data management and high-speed operations essential for modern electronic environments. The Memory ROHM Semiconductor BR25S640FJ-WE2 offers a storage capacity of 64Kbit, making it an ideal choice for applications requiring frequent data updates and retrieval without compromising on reliability and performance.

BR25S640FJ-WE2 Features

This EEPROM IC includes several key features such as low-power consumption, high reliability, and endurance with a wide operating temperature range. The device supports a Serial Peripheral Interface (SPI) that enhances its compatibility with the majority of the modern microcontrollers. Additionally, its 64Kbit capacity is partitioned into uniform block sizes, facilitating easier and more flexible data management.

BR25S640FJ-WE2 Applications

  • Data Storage in Industrial Applications: Utilized for storing machine parameters and configurations, ensuring quick retrieval and facilitating easy updates without interrupting operational flow.
  • Consumer Electronics: Implements user settings and preferences in devices like TV remotes and digital cameras, enhancing user experience by maintaining customization through multiple usages.
  • Medical Devices: Serves critical roles in storing firmware updates and device configuration data, crucial for device reliability and functionality in medical environments.
  • Automotive Systems: Used in automotive electronics for storing non-volatile data such as user settings and system status information, contributing to vehicle personalization and functionality enhancement.
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