BR25L080FV-WE2

Manufacturer :

ROHM Semiconductor

Product Category :

Memory

Operating Supply Voltage :

5V

Memory Interface :

SPI

Memory Format :

EEPROM

Package / Case :

8-LSSOP (0.173, 4.40mm Width)

Number of Terminations :

8

Length :

4.4mm

Data Retention Time-Min :

40

Endurance :

1000000 Write/Erase Cycles

Memory Width :

8

Height Seated (Max) :

1.25mm

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

10

Number of Functions :

1

Organization :

1KX8

Mount :

Surface Mount

Supply Voltage :

2.5V

Write Cycle Time - Word, Page :

5ms

Terminal Pitch :

0.65mm

Width :

3mm

HTS Code :

8542.32.00.51

Density :

8 kB

Standby Current-Max :

0.000002A

Write Protection :

Hardware

Interface :

SPI, Serial

Write Cycle Time-Max (tWC) :

5ms

Contact Plating :

Copper, Tin

Terminal Finish :

Tin/Copper (Sn/Cu)

Voltage - Supply :

1.8V~5.5V

Supply Current-Max :

0.003mA

Clock Frequency :

5MHz

ECCN Code :

EAR99

Radiation Hardening :

No

Base Part Number :

BR25L080

JESD-609 Code :

e2

Mounting Type :

Surface Mount

Published :

2010

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PDSO-G8

Lead Free :

Lead Free

Memory Size :

8Kb 1K x 8

Operating Temperature :

-40°C~85°C TA

Supply Voltage-Min (Vsup) :

1.8V

Serial Bus Type :

SPI

Memory Type :

Non-Volatile

Pbfree Code :

yes

Pin Count :

8

RoHS Status :

ROHS3 Compliant