BR25L010FVJ-WE2

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Mfr.Part #
BR25L010FVJ-WE2
Manufacturer
ROHM Semiconductor
Package / Case
8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
Datasheet
Download
Description
IC EEPROM 1KBIT SPI 5MHZ 8TSSOP
Stock
1
In Stock :
1

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Manufacturer :
ROHM Semiconductor
Product Category :
Memory
Memory Width :
8
Length :
3mm
Endurance :
1000000 Write/Erase Cycles
Peak Reflow Temperature (Cel) :
260
Mounting Type :
Surface Mount
Pin Count :
8
Published :
2010
Number of Functions :
1
Base Part Number :
BR25L010
Interface :
SPI, Serial
Mount :
Surface Mount
RoHS Status :
ROHS3 Compliant
Operating Mode :
SYNCHRONOUS
Access Time :
5 μs
Memory Format :
EEPROM
Terminal Finish :
TIN COPPER
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Terminations :
8
Contact Plating :
Copper, Tin
ECCN Code :
EAR99
Supply Voltage-Min (Vsup) :
1.8V
Lead Free :
Lead Free
Packaging :
Tape and Reel (TR)
HTS Code :
8542.32.00.51
Write Protection :
Hardware
Width :
3mm
Write Cycle Time-Max (tWC) :
5ms
Supply Current-Max :
0.003mA
Qualification Status :
Not Qualified
Serial Bus Type :
SPI
Height Seated (Max) :
1.05mm
Pbfree Code :
yes
JESD-30 Code :
S-PDSO-G8
Memory Type :
Non-Volatile
Memory Interface :
SPI
Voltage - Supply :
1.8V~5.5V
Memory Size :
1Kb 128 x 8
JESD-609 Code :
e2
Terminal Position :
Dual
Time@Peak Reflow Temperature-Max (s) :
10
Operating Supply Voltage :
5V
Clock Frequency :
5MHz
Terminal Pitch :
0.65mm
Data Retention Time-Min :
40
Standby Current-Max :
0.000002A
Organization :
128X8
Density :
1 kb
Supply Voltage :
2.5V
Package / Case :
8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
Operating Temperature :
-40°C~85°C TA
Write Cycle Time - Word, Page :
5ms
Datasheets
BR25L010FVJ-WE2
Introducing Memory ROHM Semiconductor BR25L010FVJ-WE2 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Base Part Number:BR25L010, Number of Terminations:8, Package / Case:8-TSSOP, 8-MSOP (0.118, 3.00mm Width), Operating Temperature:-40°C~85°C TA, BR25L010FVJ-WE2 pinout, BR25L010FVJ-WE2 datasheet PDF, BR25L010FVJ-WE2 amp .Beyond Memory ROHM Semiconductor BR25L010FVJ-WE2 ,we also offer AT25SF081B-SSHB-T, AT25SF041B-SSHB-T, AT25SF041B-SHB-T, Our vast inventory has you covered. Contact us now for immediate solutions.

ROHM Semiconductor BR25L010FVJ-WE2


Memory ROHM Semiconductor BR25L010FVJ-WE2 Overview

The Memory ROHM Semiconductor BR25L010FVJ-WE2 is a cutting-edge EEPROM chip that offers a reliable and efficient way to store data. This integrated circuit features a compact 8TSSOP package and boasts a 1Kbit capacity, which is ideal for applications requiring small data storage with high durability and data integrity. Its SPI (Serial Peripheral Interface) allows for fast communication at speeds up to 5MHZ, making it a swift performer for a variety of industrial and commercial applications. ROHM's adherence to stringent quality standards ensures that this memory chip delivers consistent performance and stands up to the demands of rigorous usage.

BR25L010FVJ-WE2 Features

  • 1Kbit EEPROM
  • SPI interface with up to 5MHZ frequency
  • Compact 8TSSOP package for space-sensitive applications
  • Low power consumption for energy-efficient designs
  • Stable data retention for reliable non-volatile memory storage

BR25L010FVJ-WE2 Applications

  • Wearable Electronics: Utilized for configuration storage, enabling custom settings retention even when the device is powered off.
  • Medical Devices: Employed to keep device calibration data, ensuring accurate diagnostics and monitoring.
  • Industrial Automation: Serves as a method to store firmware settings in automation equipment, aiding in consistent operation and ease of updates.
  • Consumer Electronics: Used for preference storage in small devices like remote controls, enhancing the user experience through personalization.
  • Internet of Things (IoT) Devices: Acts as secure storage for device identifiers and network configuration, critical for seamless integration into IoT ecosystems.
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