BR25H128F-2ACE2

Manufacturer :

ROHM Semiconductor

Product Category :

Memory

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Supply Voltage-Max (Vsup) :

5.5V

Write Cycle Time-Max (tWC) :

4ms

Width :

4.4mm

Height Seated (Max) :

1.71mm

Serial Bus Type :

SPI

Surface Mount :

yes

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Memory Format :

EEPROM

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Memory Interface :

SPI

Terminal Position :

Dual

Memory Type :

Non-Volatile

JESD-30 Code :

R-PDSO-G8

Memory Density :

131072 bit

Package / Case :

8-SOIC (0.173, 4.40mm Width)

Factory Lead Time :

15 Weeks

Clock Frequency :

10MHz

Number of Functions :

1

Organization :

16KX8

Parallel/Serial :

Serial

Number of Terminations :

8

Length :

5mm

Terminal Pitch :

1.27mm

Write Cycle Time - Word, Page :

4ms

Memory Width :

8

Supply Voltage-Min (Vsup) :

2.5V

Memory Size :

128Kb 16K x 8

Additional Feature :

SEATED HT-CALCULATED

Operating Temperature :

-40°C~125°C TA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Voltage - Supply :

2.5V~5.5V

Operating Mode :

SYNCHRONOUS

Series :

Automotive, AEC-Q100