BR25G512FJ-3GE2

Manufacturer :

ROHM Semiconductor

Product Category :

Memory

JESD-30 Code :

R-PDSO-G8

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Additional Feature :

SEATED HT-CALCULATED

Memory Type :

Non-Volatile

Terminal Pitch :

1.27mm

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Supply :

1.8V~5.5V

Height Seated (Max) :

1.65mm

Packaging :

Cut Tape (CT)

Supply Voltage-Max (Vsup) :

5.5V

Parallel/Serial :

Serial

Factory Lead Time :

9 Weeks

Mounting Type :

Surface Mount

Operating Mode :

SYNCHRONOUS

Number of Terminations :

8

Width :

3.9mm

Length :

4.9mm

Memory Size :

512Kb 64K x 8

Memory Format :

EEPROM

Memory Interface :

SPI

Clock Frequency :

10MHz

Supply Voltage-Min (Vsup) :

1.8V

Operating Temperature :

-40°C~85°C TA

Memory Width :

8

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Write Cycle Time-Max (tWC) :

5ms

Memory Density :

524288 bit

Surface Mount :

yes

Serial Bus Type :

SPI

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Write Cycle Time - Word, Page :

5ms

Number of Functions :

1

Organization :

64KX8