BQ4011YMA-70N

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Mfr.Part #
BQ4011YMA-70N
Manufacturer
Texas Instruments
Package / Case
28-DIP Module (0.61, 15.49mm)
Datasheet
Download
Description
IC NVSRAM 256KBIT PARALLEL 28DIP
Stock
38,173
In Stock :
38,173

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Manufacturer :
Texas Instruments
Product Category :
Memory
HTS Code :
8542.32.00.41
Radiation Hardening :
No
Width :
18.42mm
Memory Interface :
Parallel
Access Time (Max) :
70 ns
RoHS Status :
ROHS3 Compliant
Terminal Pitch :
2.54mm
Height :
9.4mm
Nominal Supply Current :
50mA
Number of Functions :
1
Operating Supply Voltage :
5V
Length :
37.72mm
Packaging :
Tube
Density :
256 kb
Mount :
Through Hole
Memory Size :
256Kb 32K x 8
Voltage - Supply :
4.5V~5.5V
Number of Terminations :
28
Write Cycle Time - Word, Page :
70ns
ECCN Code :
EAR99
Base Part Number :
BQ4011
Word Size :
8B
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Standby Current-Max :
0.004A
Operating Temperature :
-40°C~85°C TA
Memory Format :
NVSRAM
Lead Free :
Contains Lead
Organization :
32KX8
Data Bus Width :
8B
Memory Type :
Non-Volatile
Package / Case :
28-DIP Module (0.61, 15.49mm)
Supply Voltage :
5V
Pbfree Code :
No
Number of Pins :
28
Power Supplies :
5V
Mounting Type :
Through Hole
Terminal Position :
Dual
Datasheets
BQ4011YMA-70N
Introducing Memory Texas Instruments BQ4011YMA-70N from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:28, Base Part Number:BQ4011, Operating Temperature:-40°C~85°C TA, Package / Case:28-DIP Module (0.61, 15.49mm), Number of Pins:28, Mounting Type:Through Hole, BQ4011YMA-70N pinout, BQ4011YMA-70N datasheet PDF, BQ4011YMA-70N amp .Beyond Memory Texas Instruments BQ4011YMA-70N ,we also offer AT25SF081B-SSHB-T, AT25SF041B-SSHB-T, AT25SF041B-SHB-T, Our vast inventory has you covered. Contact us now for immediate solutions.

Texas Instruments BQ4011YMA-70N


Memory Texas Instruments BQ4011YMA-70N Overview

The Memory Texas Instruments BQ4011YMA-70N is a high-performance IC NVSRAM with a capacity of 256KBIT, housed in a robust 28DIP package. This non-volatile static RAM (NVSRAM) ensures data retention without the need for an external battery, making it a reliable choice for critical data storage applications. With its parallel interface, it offers fast access times which are essential for real-time computing applications. This makes the Memory Texas Instruments BQ4011YMA-70N an ideal solution for businesses requiring solid, long-term data integrity without continuous power.

BQ4011YMA-70N Features

The BQ4011YMA-70N features include 256Kbit of non-volatile memory, fast access time, and low power consumption. Its robust 28DIP packaging ensures durability and easy integration into a variety of systems. Additionally, it supports a parallel interface for high-speed data transfer, and its non-volatile nature means that data is retained even when power is lost, securing critical information effectively.

BQ4011YMA-70N Applications

  • Industrial Control Systems: Integrates seamlessly to provide reliable data logging and settings storage without requiring frequent battery replacement.
  • Medical Devices: Ensures patient data integrity in devices such as medical monitoring systems, where data loss prevention is critical.
  • Telecommunications: Used in network equipment for configuration data storage, facilitating quick recovery and initialization upon power cycling.
  • Automotive Electronics: Offers dependable data storage for critical automotive functions, enhancing both performance and safety features.
  • Point of Sale Systems: Provides robust data protection for transaction and user data, essential in retail environments for ensuring continuous operations.
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