BLF881S,112

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Manufacturer :

Ampleon

PCB changed :

3

DS Breakdown Voltage-Min :

104 V

Package Height :

4.67(Max)

Package Length :

9.78(Max)

Minimum Operating Temperature (°C) :

-65

Base Product Number :

BLF88

Pin Count :

3

Operating Mode :

ENHANCEMENT MODE

Package Shape :

RECTANGULAR

Supplier Package :

LDMOST

Maximum Drain Source Resistance (mOhm) :

210(Typ)@6.15V

Packaging :

Bulk

Terminal Position :

Dual

Configuration :

Single

Typical Power Gain (dB) :

21

Polarity/Channel Type :

N-Channel

Minimum Frequency (MHz) :

1

Mounting :

Surface Mount

Maximum Frequency (MHz) :

860

Military :

No

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Maximum Drain Source Voltage (V) :

104

Series :

*

Package Width :

5.92(Max)

Channel Type :

N

RoHS Status :

RoHS Compliant

Typical Reverse Transfer Capacitance @ Vds (pF) :

1@50V

Maximum Gate Source Voltage (V) :

13

Surface Mount :

yes

Process Technology :

LDMOS

Reach Compliance Code :

Unknown

Channel Mode :

Enhancement

Typical Input Capacitance @ Vds (pF) :

100@50V

HTS :

8541.29.00.95

Number of Elements :

1

Terminal Form :

Flat

JESD-30 Code :

R-CDFP-F2

Highest Frequency Band :

ULTRA HIGH FREQUENCY BAND

Maximum VSWR :

10

Maximum Operating Temperature (°C) :

200

Product Status :

Active

Case Connection :

SOURCE

Transistor Element Material :

SILICON

Number of Elements per Chip :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

ECCN (US) :

EAR99

ECCN Code :

EAR99

Number of Terminals :

2

Transistor Application :

AMPLIFIER

Factory Lead Time :

26 Weeks

Mode of Operation :

DVB-T|2-Tone Class-AB

Typical Drain Efficiency (%) :

49

Typical Output Capacitance @ Vds (pF) :

33.5@50V

Output Power (W) :

140(Typ)

Reference Standard :

IEC-60134

Package :

Bulk