BLF881S,112

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Maximum VSWR :

10

Highest Frequency Band :

ULTRA HIGH FREQUENCY BAND

Base Product Number :

BLF88

Supplier Package :

LDMOST

Terminal Form :

Flat

Minimum Frequency (MHz) :

1

Manufacturer :

Ampleon

Typical Power Gain (dB) :

21

Surface Mount :

yes

JESD-30 Code :

R-CDFP-F2

RoHS Status :

RoHS Compliant

Operating Mode :

ENHANCEMENT MODE

Number of Elements per Chip :

1

Polarity/Channel Type :

N-Channel

Maximum Gate Source Voltage (V) :

13

ECCN (US) :

EAR99

Typical Input Capacitance @ Vds (pF) :

100@50V

Package Height :

4.67(Max)

Transistor Element Material :

SILICON

Mounting :

Surface Mount

Mode of Operation :

DVB-T|2-Tone Class-AB

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Output Power (W) :

140(Typ)

Package Shape :

RECTANGULAR

Process Technology :

LDMOS

Maximum Drain Source Voltage (V) :

104

Package Length :

9.78(Max)

PCB changed :

3

Configuration :

Single

Channel Type :

N

Pin Count :

3

Series :

*

Product Status :

Active

Maximum Frequency (MHz) :

860

Package Width :

5.92(Max)

DS Breakdown Voltage-Min :

104 V

Typical Drain Efficiency (%) :

49

Minimum Operating Temperature (°C) :

-65

Reach Compliance Code :

Unknown

Typical Reverse Transfer Capacitance @ Vds (pF) :

1@50V

Package :

Bulk

Number of Terminals :

2

Channel Mode :

Enhancement

Reference Standard :

IEC-60134

ECCN Code :

EAR99

Maximum Drain Source Resistance (mOhm) :

210(Typ)@6.15V

Maximum Operating Temperature (°C) :

200

Military :

No

Transistor Application :

AMPLIFIER

Typical Output Capacitance @ Vds (pF) :

33.5@50V

Case Connection :

SOURCE

HTS :

8541.29.00.95

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Packaging :

Bulk

Terminal Position :

Dual

Factory Lead Time :

26 Weeks