BLF881S,112
- Mfr.Part #
- BLF881S,112
- Manufacturer
- NXP Semiconductors
- Package / Case
- Datasheet
- Download
- Description
- TRANSISTOR PWR UHF LDMOS SOT467B
- Stock
- 18,254
- In Stock :
- 18,254
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- PCB changed :
- 3
- Package Height :
- 4.67(Max)
- Number of Elements :
- 1
- Mounting :
- Surface Mount
- Series :
- *
- Reach Compliance Code :
- Unknown
- Number of Terminals :
- 2
- Reference Standard :
- IEC-60134
- Minimum Operating Temperature (°C) :
- -65
- Package Length :
- 9.78(Max)
- Number of Elements per Chip :
- 1
- Package Width :
- 5.92(Max)
- JESD-30 Code :
- R-CDFP-F2
- Process Technology :
- LDMOS
- Case Connection :
- SOURCE
- Maximum Drain Source Voltage (V) :
- 104
- DS Breakdown Voltage-Min :
- 104 V
- Typical Drain Efficiency (%) :
- 49
- Supplier Package :
- LDMOST
- Minimum Frequency (MHz) :
- 1
- Package Shape :
- RECTANGULAR
- Typical Reverse Transfer Capacitance @ Vds (pF) :
- 1@50V
- Factory Lead Time :
- 26 Weeks
- ECCN (US) :
- EAR99
- Channel Mode :
- Enhancement
- Typical Output Capacitance @ Vds (pF) :
- 33.5@50V
- Pin Count :
- 3
- Configuration :
- Single
- Transistor Application :
- AMPLIFIER
- Maximum VSWR :
- 10
- Base Product Number :
- BLF88
- Military :
- No
- Terminal Form :
- Flat
- Maximum Gate Source Voltage (V) :
- 13
- Package :
- Bulk
- Maximum Drain Source Resistance (mOhm) :
- 210(Typ)@6.15V
- HTS :
- 8541.29.00.95
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Transistor Element Material :
- SILICON
- Packaging :
- Bulk
- Maximum Operating Temperature (°C) :
- 200
- RoHS Status :
- RoHS Compliant
- Surface Mount :
- yes
- Product Status :
- Active
- Output Power (W) :
- 140(Typ)
- Highest Frequency Band :
- ULTRA HIGH FREQUENCY BAND
- Terminal Position :
- Dual
- Polarity/Channel Type :
- N-Channel
- Channel Type :
- N
- Manufacturer :
- Ampleon
- ECCN Code :
- EAR99
- Operating Mode :
- ENHANCEMENT MODE
- Maximum Frequency (MHz) :
- 860
- Mode of Operation :
- DVB-T|2-Tone Class-AB
- Typical Power Gain (dB) :
- 21
- Typical Input Capacitance @ Vds (pF) :
- 100@50V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Datasheets
- BLF881S,112
BLF881S,112 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP Semiconductors stock available at
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