BLF881S,112

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Typical Output Capacitance @ Vds (pF) :

33.5@50V

Process Technology :

LDMOS

ECCN Code :

EAR99

Maximum Drain Source Resistance (mOhm) :

210(Typ)@6.15V

Maximum Drain Source Voltage (V) :

104

Package Height :

4.67(Max)

Maximum VSWR :

10

Surface Mount :

yes

Factory Lead Time :

26 Weeks

Military :

No

Case Connection :

SOURCE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Typical Input Capacitance @ Vds (pF) :

100@50V

Terminal Form :

Flat

Mounting :

Surface Mount

Minimum Operating Temperature (°C) :

-65

Number of Terminals :

2

Packaging :

Bulk

Base Product Number :

BLF88

JESD-30 Code :

R-CDFP-F2

Maximum Gate Source Voltage (V) :

13

DS Breakdown Voltage-Min :

104 V

Number of Elements per Chip :

1

Output Power (W) :

140(Typ)

Package Width :

5.92(Max)

Transistor Element Material :

SILICON

Typical Power Gain (dB) :

21

RoHS Status :

RoHS Compliant

Product Status :

Active

Channel Mode :

Enhancement

Number of Elements :

1

Package :

Bulk

Pin Count :

3

Reach Compliance Code :

Unknown

Transistor Application :

AMPLIFIER

Typical Drain Efficiency (%) :

49

Highest Frequency Band :

ULTRA HIGH FREQUENCY BAND

Maximum Frequency (MHz) :

860

Reference Standard :

IEC-60134

ECCN (US) :

EAR99

Terminal Position :

Dual

Series :

*

Minimum Frequency (MHz) :

1

HTS :

8541.29.00.95

Package Shape :

RECTANGULAR

Supplier Package :

LDMOST

Configuration :

Single

Package Length :

9.78(Max)

Maximum Operating Temperature (°C) :

200

Polarity/Channel Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

PCB changed :

3

Channel Type :

N

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Typical Reverse Transfer Capacitance @ Vds (pF) :

1@50V

Mode of Operation :

DVB-T|2-Tone Class-AB

Manufacturer :

Ampleon