BLF178XRS,112
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- Mfr.Part #
- BLF178XRS,112
- Manufacturer
- Ampleon
- Package / Case
- SOT539B
- Datasheet
- Download
- Description
- RF FET LDMOS 110V 28DB SOT539B
- Stock
- 2
- In Stock ：
- 2
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- Manufacturer :
- Ampleon
- Product Category :
- Transistors - FETs, MOSFETs - RF
- Published :
- 2010
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power - Output :
- 1400W
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Factory Lead Time :
- 13 Weeks
- Number of Terminations :
- 4
- Terminal Form :
- Flat
- Transistor Application :
- AMPLIFIER
- Transistor Type :
- LDMOS (Dual), Common Source
- Reference Standard :
- IEC-60134
- RoHS Status :
- ROHS3 Compliant
- JESD-30 Code :
- R-CDFP-F4
- Package / Case :
- SOT539B
- ECCN Code :
- EAR99
- Gain :
- 28dB
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Configuration :
- COMMON SOURCE, 2 ELEMENTS
- Number of Elements :
- 2
- Transistor Element Material :
- SILICON
- Frequency :
- 108MHz
- Current - Test :
- 40mA
- Packaging :
- Tray
- Voltage - Test :
- 50V
- Polarity/Channel Type :
- N-Channel
- Voltage - Rated :
- 110V
- Reach Compliance Code :
- Unknown
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- DS Breakdown Voltage-Min :
- 110V
- Surface Mount :
- yes
- Operating Mode :
- ENHANCEMENT MODE
- Datasheets
- BLF178XRS,112
BLF178XRS,112 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from Ampleon USA Inc. stock available at
Features of the Ampleon Transistors - FETs, MOSFETs - RF BLF178XRS,112 include high power efficiency, low distortion, and high linearity. They also have a wide frequency range of up to 6GHz and a high breakdown voltage of 110V.
Applications of the Ampleon Transistors - FETs, MOSFETs - RF BLF178XRS,112 include RF power amplifiers for cellular base stations, Wi-Fi access points, and other wireless communication systems. They are also suitable for use in RF power amplifiers for broadcast and satellite applications.
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