BF909WR,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - RF

Operating Temperature (Max) :

150°C

Surface Mount :

yes

Transistor Application :

AMPLIFIER

Voltage - Rated :

7V

Terminal Finish :

Tin (Sn)

Configuration :

COMPLEX

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminations :

4

Number of Elements :

2

Published :

1995

DS Breakdown Voltage-Min :

7V

JESD-30 Code :

R-PDSO-G4

Drain Current-Max (Abs) (ID) :

0.04A

Frequency :

800MHz

Pin Count :

4

Transistor Type :

N-Channel Dual Gate

Feedback Cap-Max (Crss) :

0.05 pF

RoHS Status :

ROHS3 Compliant

Current Rating (Amps) :

40mA

Current - Test :

15mA

Noise Figure :

2dB

Reach Compliance Code :

Unknown

Peak Reflow Temperature (Cel) :

260

Operating Mode :

DUAL GATE, ENHANCEMENT MODE

Terminal Form :

Gull wing

Qualification Status :

Not Qualified

Base Part Number :

BF909

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Element Material :

SILICON

Voltage - Test :

5V

Package / Case :

SC-82A, SOT-343

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

LOW NOISE

ECCN Code :

EAR99

Case Connection :

SOURCE

JESD-609 Code :

e3

HTS Code :

8541.21.00.75

Packaging :

Tape and Reel (TR)