BF909,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - RF

Operating Mode :

DUAL GATE, ENHANCEMENT MODE

Number of Elements :

2

Operating Temperature (Max) :

150°C

Terminal Form :

Gull wing

ECCN Code :

EAR99

JESD-609 Code :

e3

Configuration :

COMPLEX

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

0.04A

Package / Case :

TO-253-4, TO-253AA

Frequency :

800MHz

Base Part Number :

BF909

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Feedback Cap-Max (Crss) :

0.05 pF

HTS Code :

8541.21.00.75

Surface Mount :

yes

Published :

1998

Terminal Finish :

Matte Tin (Sn)

Noise Figure :

2dB

Voltage - Test :

5V

Case Connection :

SOURCE

JESD-30 Code :

R-PDSO-G4

Current - Test :

15mA

Pin Count :

4

Current Rating (Amps) :

40mA

Reach Compliance Code :

Unknown

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

4

Transistor Type :

N-Channel Dual Gate

Time@Peak Reflow Temperature-Max (s) :

40

Voltage - Rated :

7V

Additional Feature :

LOW NOISE

Transistor Application :

AMPLIFIER

DS Breakdown Voltage-Min :

7V

RoHS Status :

ROHS3 Compliant

Qualification Status :

Not Qualified

FET Technology :

METAL-OXIDE SEMICONDUCTOR