BF909,215

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Mfr.Part #
BF909,215
Manufacturer
NXP Semiconductors
Package / Case
TO-253-4, TO-253AA
Datasheet
Download
Description
MOSFET N-CH 7V 40MA SOT143
Stock
38,210
In Stock :
38,210

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Manufacturer :
NXP Semiconductors
Product Category :
Transistors - FETs, MOSFETs - RF
JESD-609 Code :
e3
Base Part Number :
BF909
Configuration :
COMPLEX
Terminal Form :
Gull wing
Pin Count :
4
Package / Case :
TO-253-4, TO-253AA
Current Rating (Amps) :
40mA
Noise Figure :
2dB
Frequency :
800MHz
Qualification Status :
Not Qualified
Drain Current-Max (Abs) (ID) :
0.04A
Operating Mode :
DUAL GATE, ENHANCEMENT MODE
Feedback Cap-Max (Crss) :
0.05 pF
Peak Reflow Temperature (Cel) :
260
DS Breakdown Voltage-Min :
7V
Voltage - Test :
5V
Voltage - Rated :
7V
Additional Feature :
LOW NOISE
Transistor Application :
AMPLIFIER
Operating Temperature (Max) :
150°C
ECCN Code :
EAR99
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Published :
1998
RoHS Status :
ROHS3 Compliant
Packaging :
Tape and Reel (TR)
Reach Compliance Code :
Unknown
Transistor Type :
N-Channel Dual Gate
Terminal Finish :
Matte Tin (Sn)
JESD-30 Code :
R-PDSO-G4
Current - Test :
15mA
Number of Terminations :
4
Transistor Element Material :
SILICON
HTS Code :
8541.21.00.75
Time@Peak Reflow Temperature-Max (s) :
40
Surface Mount :
yes
Number of Elements :
2
Case Connection :
SOURCE
Datasheets
BF909,215
Introducing Transistors - FETs, MOSFETs - RF NXP Semiconductors BF909,215 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:BF909, Package / Case:TO-253-4, TO-253AA, Number of Terminations:4, BF909,215 pinout, BF909,215 datasheet PDF, BF909,215 amp .Beyond Transistors - FETs, MOSFETs - RF NXP Semiconductors BF909,215 ,we also offer BLF174XR,112, BLF2425M9L30U, BLF183XRU, Our vast inventory has you covered. Contact us now for immediate solutions.

NXP Semiconductors BF909,215


BF909,215 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available at

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