BF908,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - RF

Time@Peak Reflow Temperature-Max (s) :

40

ECCN Code :

EAR99

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Noise Figure :

0.6dB

HTS Code :

8541.21.00.75

Case Connection :

SOURCE

Package / Case :

TO-253-4, TO-253AA

Pin Count :

4

Terminal Finish :

Tin (Sn)

Qualification Status :

Not Qualified

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Temperature (Max) :

150°C

Power Dissipation-Max (Abs) :

0.2W

Transistor Element Material :

SILICON

Voltage - Rated :

12V

Drain Current-Max (Abs) (ID) :

0.04A

Voltage - Test :

8V

DS Breakdown Voltage-Min :

12V

Base Part Number :

BF908

Frequency :

200MHz

Feedback Cap-Max (Crss) :

45 pF

Current Rating (Amps) :

40mA

Surface Mount :

yes

Additional Feature :

LOW NOISE

Published :

1996

Current - Test :

15mA

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PDSO-G4

Terminal Form :

Gull wing

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

4

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Transistor Type :

N-Channel Dual Gate

Operating Mode :

DUAL GATE, DEPLETION MODE

Transistor Application :

AMPLIFIER