BF1214,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - RF

Power Dissipation-Max (Abs) :

0.18W

Published :

2007

Time@Peak Reflow Temperature-Max (s) :

40

Packaging :

Tape and Reel (TR)

Current Rating (Amps) :

30mA

Frequency :

400MHz

HTS Code :

8541.21.00.75

Operating Temperature (Max) :

150°C

JESD-30 Code :

R-PDSO-G6

JESD-609 Code :

e3

Terminal Finish :

Tin (Sn)

Transistor Application :

SWITCHING

Voltage - Test :

5V

Pin Count :

6

Terminal Form :

Gull wing

Number of Terminations :

6

Qualification Status :

Not Qualified

RoHS Status :

ROHS3 Compliant

Transistor Type :

N-Channel Dual Gate

Configuration :

COMMON SOURCE, 2 ELEMENTS

ECCN Code :

EAR99

Gain :

31dB

Noise Figure :

0.9dB

Peak Reflow Temperature (Cel) :

260

Current - Test :

18mA

Voltage - Rated :

6V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Mode :

DUAL GATE, ENHANCEMENT MODE

Surface Mount :

yes

Drain Current-Max (Abs) (ID) :

0.03A

Package / Case :

6-TSSOP, SC-88, SOT-363

Number of Elements :

2

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

6V