BF1212,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - RF

Transistor Application :

AMPLIFIER

Operating Temperature (Max) :

150°C

Feedback Cap-Max (Crss) :

0.03 pF

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Qualification Status :

Not Qualified

Surface Mount :

yes

Power Dissipation-Max (Abs) :

0.18W

Pin Count :

4

Number of Terminations :

4

Current Rating (Amps) :

30mA

Published :

2003

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-253-4, TO-253AA

Frequency :

400MHz

Base Part Number :

BF1212

Current - Test :

12mA

Transistor Type :

N-Channel Dual Gate

Gain :

30dB

Packaging :

Tape and Reel (TR)

Noise Figure :

0.9dB

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Form :

Gull wing

Voltage - Rated :

6V

Drain Current-Max (Abs) (ID) :

0.03A

Case Connection :

SOURCE

DS Breakdown Voltage-Min :

6V

RoHS Status :

ROHS3 Compliant

Additional Feature :

LOW NOISE

Operating Mode :

DUAL GATE, ENHANCEMENT MODE

Terminal Finish :

Tin (Sn)

HTS Code :

8541.21.00.75

Number of Elements :

1

Voltage - Test :

5V

JESD-30 Code :

R-PDSO-G4

JESD-609 Code :

e3