BF1211WR,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - RF

Published :

2003

DS Breakdown Voltage-Min :

6V

Transistor Application :

AMPLIFIER

Frequency :

400MHz

Drain Current-Max (Abs) (ID) :

0.03A

Current Rating (Amps) :

30mA

Power Dissipation-Max (Abs) :

0.18W

Transistor Type :

N-Channel Dual Gate

Peak Reflow Temperature (Cel) :

260

Base Part Number :

BF1211

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

Additional Feature :

LOW NOISE

HTS Code :

8541.21.00.75

Current - Test :

15mA

Configuration :

COMPLEX

Pin Count :

4

Terminal Form :

Gull wing

Case Connection :

SOURCE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

ECCN Code :

EAR99

Voltage - Rated :

6V

Noise Figure :

0.9dB

Time@Peak Reflow Temperature-Max (s) :

40

Packaging :

Tape and Reel (TR)

Number of Terminations :

4

Voltage - Test :

5V

JESD-30 Code :

R-PDSO-G4

Reach Compliance Code :

Unknown

Package / Case :

SC-82A, SOT-343

Number of Elements :

2

Operating Mode :

DUAL GATE, ENHANCEMENT MODE

JESD-609 Code :

e3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Temperature (Max) :

150°C

RoHS Status :

ROHS3 Compliant

Gain :

29dB

Feedback Cap-Max (Crss) :

0.03 pF

Surface Mount :

yes