BF1211R,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - RF

Peak Reflow Temperature (Cel) :

260

Case Connection :

SOURCE

Current - Test :

15mA

Packaging :

Tape and Reel (TR)

Qualification Status :

Not Qualified

Noise Figure :

0.9dB

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Voltage - Rated :

6V

Transistor Application :

AMPLIFIER

DS Breakdown Voltage-Min :

6V

Terminal Form :

Gull wing

Surface Mount :

yes

Number of Elements :

2

Current Rating (Amps) :

30mA

Operating Temperature (Max) :

150°C

Additional Feature :

LOW NOISE

Reach Compliance Code :

Unknown

Gain :

29dB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

Power Dissipation-Max (Abs) :

0.18W

Published :

2003

JESD-30 Code :

R-PDSO-G4

RoHS Status :

ROHS3 Compliant

Configuration :

COMPLEX

JESD-609 Code :

e3

Transistor Type :

N-Channel Dual Gate

Number of Terminations :

4

Frequency :

400MHz

Pin Count :

4

Base Part Number :

BF1211

Package / Case :

SOT-143R

ECCN Code :

EAR99

Feedback Cap-Max (Crss) :

0.03 pF

Operating Mode :

DUAL GATE, ENHANCEMENT MODE

Voltage - Test :

5V

HTS Code :

8541.21.00.75

Drain Current-Max (Abs) (ID) :

0.03A

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Element Material :

SILICON