BF1211,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - RF

Operating Temperature (Max) :

150°C

Voltage - Test :

5V

Voltage - Rated :

6V

Terminal Form :

Gull wing

JESD-609 Code :

e3

JESD-30 Code :

R-PDSO-G4

Noise Figure :

0.9dB

Case Connection :

SOURCE

Transistor Element Material :

SILICON

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Elements :

2

Current - Test :

15mA

Pin Count :

4

Feedback Cap-Max (Crss) :

0.03 pF

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Transistor Type :

N-Channel Dual Gate

HTS Code :

8541.21.00.75

Transistor Application :

AMPLIFIER

Qualification Status :

Not Qualified

Reach Compliance Code :

Unknown

Configuration :

COMPLEX

Published :

2003

Terminal Finish :

Tin (Sn)

Drain Current-Max (Abs) (ID) :

0.03A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Power Dissipation-Max (Abs) :

0.18W

Peak Reflow Temperature (Cel) :

260

Gain :

29dB

Package / Case :

TO-253-4, TO-253AA

Frequency :

400MHz

Operating Mode :

DUAL GATE, ENHANCEMENT MODE

Number of Terminations :

4

Surface Mount :

yes

Additional Feature :

LOW NOISE

Base Part Number :

BF1211

Current Rating (Amps) :

30mA

DS Breakdown Voltage-Min :

6V

Time@Peak Reflow Temperature-Max (s) :

40