BF1210,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - RF

Configuration :

COMMON SOURCE, 2 ELEMENTS

Transistor Application :

AMPLIFIER

Drain Current-Max (Abs) (ID) :

0.03A

Frequency :

400MHz

Noise Figure :

0.9dB

Terminal Finish :

Matte Tin (Sn)

Surface Mount :

yes

Operating Mode :

DUAL GATE, ENHANCEMENT MODE

Number of Elements :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated :

6V

Pin Count :

6

Gain :

31dB

HTS Code :

8541.21.00.75

Time@Peak Reflow Temperature-Max (s) :

40

Power Dissipation-Max (Abs) :

0.18W

Current - Test :

19mA

Current Rating (Amps) :

30mA

Package / Case :

6-TSSOP, SC-88, SOT-363

JESD-30 Code :

R-PDSO-G6

Published :

2006

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Temperature (Max) :

150°C

Transistor Type :

N-Channel Dual Gate

Transistor Element Material :

SILICON

Number of Terminations :

6

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

JESD-609 Code :

e3

Voltage - Test :

5V

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

6V

Peak Reflow Temperature (Cel) :

260