BF1201WR,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - RF

Transistor Type :

N-Channel Dual Gate

Terminal Form :

Gull wing

Power Dissipation-Max (Abs) :

0.2W

Number of Elements :

1

DS Breakdown Voltage-Min :

10V

ECCN Code :

EAR99

Voltage - Test :

5V

Surface Mount :

yes

Terminal Finish :

Tin (Sn)

Frequency :

400MHz

Voltage - Rated :

10V

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Published :

2000

Operating Mode :

DUAL GATE, ENHANCEMENT MODE

Base Part Number :

BF1201

RoHS Status :

ROHS3 Compliant

Noise Figure :

1dB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Test :

15mA

Additional Feature :

LOW NOISE

Operating Temperature (Max) :

150°C

Package / Case :

SC-82A, SOT-343

Transistor Application :

AMPLIFIER

Configuration :

SINGLE WITH BUILT-IN DIODE

Feedback Cap-Max (Crss) :

0.03 pF

Current Rating (Amps) :

30mA

Reach Compliance Code :

Unknown

Pin Count :

4

Case Connection :

SOURCE

Qualification Status :

Not Qualified

Number of Terminations :

4

Drain Current-Max (Abs) (ID) :

0.03A

Transistor Element Material :

SILICON

Gain :

29dB

JESD-30 Code :

R-PDSO-G4

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Time@Peak Reflow Temperature-Max (s) :

40

HTS Code :

8541.21.00.75

Packaging :

Tape and Reel (TR)