BF1201WR,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - RF

Terminal Finish :

Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

40

Qualification Status :

Not Qualified

Transistor Type :

N-Channel Dual Gate

Additional Feature :

LOW NOISE

DS Breakdown Voltage-Min :

10V

Operating Mode :

DUAL GATE, ENHANCEMENT MODE

Current Rating (Amps) :

30mA

Surface Mount :

yes

Terminal Form :

Gull wing

Configuration :

SINGLE WITH BUILT-IN DIODE

Published :

2000

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Voltage - Rated :

10V

Pin Count :

4

Noise Figure :

1dB

Number of Terminations :

4

FET Technology :

METAL-OXIDE SEMICONDUCTOR

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Current - Test :

15mA

Base Part Number :

BF1201

Case Connection :

SOURCE

Package / Case :

SC-82A, SOT-343

Number of Elements :

1

Operating Temperature (Max) :

150°C

Feedback Cap-Max (Crss) :

0.03 pF

Gain :

29dB

Transistor Application :

AMPLIFIER

Frequency :

400MHz

Power Dissipation-Max (Abs) :

0.2W

Voltage - Test :

5V

Packaging :

Tape and Reel (TR)

Drain Current-Max (Abs) (ID) :

0.03A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

HTS Code :

8541.21.00.75

JESD-609 Code :

e3

JESD-30 Code :

R-PDSO-G4

Reach Compliance Code :

Unknown