BF1009SE6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - RF

Radiation Hardening :

No

Transistor Application :

AMPLIFIER

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Min Operating Temperature :

-55°C

Terminal Position :

Dual

Current Rating :

25mA

Transistor Type :

N-Channel

Voltage - Rated :

12V

Operating Mode :

DUAL GATE, DEPLETION MODE

Configuration :

Single

Frequency :

800MHz

Number of Pins :

4

Max Power Dissipation :

200mW

ECCN Code :

EAR99

Number of Terminations :

4

Gain :

22dB

Package / Case :

TO-253-4, TO-253AA

Packaging :

Tape and Reel (TR)

Voltage - Test :

9V

Max Operating Temperature :

150°C

Drain Current-Max (Abs) (ID) :

0.025A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Continuous Drain Current (ID) :

25mA

Published :

2007

Number of Elements :

1

Noise Figure :

1.4dB

Case Connection :

SOURCE

Mount :

Surface Mount

RoHS Status :

RoHS Compliant