BDW73B-S

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Mfr.Part #
BDW73B-S
Manufacturer
Bourns, Inc.
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN DARL 80V 8A TO220
Stock
15,432
In Stock :
15,432

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Manufacturer :
Bourns, Inc.
Product Category :
Transistors - Bipolar (BJT) - Single
Operating Temperature :
-65°C~150°C TJ
Max Power Dissipation :
2W
Vce Saturation (Max) @ Ib, Ic :
4V @ 80mA, 8A
Transistor Type :
NPN - Darlington
Current - Collector Cutoff (Max) :
500μA
Mount :
Through Hole
Emitter Base Voltage (VEBO) :
5V
Base Part Number :
BDW73
Max Collector Current :
8A
Current - Collector (Ic) (Max) :
8A
Collector Base Voltage (VCBO) :
80V
Supplier Device Package :
TO-220
Polarity :
NPN
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Radiation Hardening :
No
Packaging :
Tube
Collector Emitter Breakdown Voltage :
80V
Max Operating Temperature :
150°C
Mounting Type :
Through Hole
Voltage - Collector Emitter Breakdown (Max) :
80V
Published :
1993
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 3A 3V
Collector Emitter Saturation Voltage :
2.5V
Min Operating Temperature :
-65°C
Power - Max :
2W
Collector Emitter Voltage (VCEO) :
80V
Number of Elements :
1
RoHS Status :
ROHS3 Compliant
Package / Case :
TO-220-3
Element Configuration :
Single
Datasheets
BDW73B-S
Introducing Transistors - Bipolar (BJT) - Single Bourns, Inc. BDW73B-S from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-65°C~150°C TJ, Base Part Number:BDW73, Mounting Type:Through Hole, Package / Case:TO-220-3, BDW73B-S pinout, BDW73B-S datasheet PDF, BDW73B-S amp .Beyond Transistors - Bipolar (BJT) - Single Bourns, Inc. BDW73B-S ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Bourns, Inc. BDW73B-S


NPN - Darlington -65°C~150°C TJ 500μA 1 Elements TO-220-3 Tube Through Hole

BDW73B-S Overview


This device has a DC current gain of 750 @ 3A 3V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 2.5V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Single BJT transistor comes in a supplier device package of TO-220.Detection of Collector Emitter Breakdown at 80V maximal voltage is present.The maximum collector current is 8A volts.

BDW73B-S Features


the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 4V @ 80mA, 8A
the emitter base voltage is kept at 5V
the supplier device package of TO-220


BDW73B-S Applications


There are a lot of Bourns Inc.
BDW73B-S applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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