BD901-S

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Mfr.Part #
BD901-S
Manufacturer
Bourns, Inc.
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN DARL 100V 8A TO220-3
Stock
26,069
In Stock :
26,069

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Manufacturer :
Bourns, Inc.
Product Category :
Transistors - Bipolar (BJT) - Single
Emitter Base Voltage (VEBO) :
5V
Mounting Type :
Through Hole
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 3A 3V
RoHS Status :
ROHS3 Compliant
Operating Temperature :
-65°C~150°C TJ
Collector Base Voltage (VCBO) :
100V
Collector Emitter Saturation Voltage :
2.5V
Power - Max :
2W
Max Collector Current :
8A
Number of Elements :
1
Polarity :
NPN
Voltage - Collector Emitter Breakdown (Max) :
100V
Max Power Dissipation :
2W
Element Configuration :
Single
Collector Emitter Voltage (VCEO) :
100V
Published :
1993
Packaging :
Tube
Max Operating Temperature :
150°C
Supplier Device Package :
TO-220-3
Vce Saturation (Max) @ Ib, Ic :
2.5V @ 12mA, 3A
Current - Collector (Ic) (Max) :
8A
Radiation Hardening :
No
Min Operating Temperature :
-65°C
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Base Part Number :
BD901
Mount :
Through Hole
Collector Emitter Breakdown Voltage :
100V
Package / Case :
TO-220-3
Current - Collector Cutoff (Max) :
500μA
Transistor Type :
NPN - Darlington
Datasheets
BD901-S
Introducing Transistors - Bipolar (BJT) - Single Bourns, Inc. BD901-S from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-65°C~150°C TJ, Base Part Number:BD901, Package / Case:TO-220-3, BD901-S pinout, BD901-S datasheet PDF, BD901-S amp .Beyond Transistors - Bipolar (BJT) - Single Bourns, Inc. BD901-S ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Bourns, Inc. BD901-S


NPN - Darlington -65°C~150°C TJ 500μA 1 Elements TO-220-3 Tube Through Hole

BD901-S Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 750 @ 3A 3V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2.5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2.5V @ 12mA, 3A.The emitter base voltage can be kept at 5V for high efficiency.This product comes in a TO-220-3 device package from the supplier.Device displays Collector Emitter Breakdown (100V maximal voltage).Single BJT transistor is possible to have a collector current as low as 8A volts at Single BJT transistors maximum.

BD901-S Features


the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 12mA, 3A
the emitter base voltage is kept at 5V
the supplier device package of TO-220-3


BD901-S Applications


There are a lot of Bourns Inc.
BD901-S applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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