BD897A-S

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Mfr.Part #
BD897A-S
Manufacturer
Bourns, Inc.
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN DARL 60V 8A TO220
Stock
7,445
In Stock :
7,445

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Manufacturer :
Bourns, Inc.
Product Category :
Transistors - Bipolar (BJT) - Single
ECCN Code :
EAR99
Vce Saturation (Max) @ Ib, Ic :
2.8V @ 16mA, 4A
Pin Count :
3
Pbfree Code :
yes
JESD-609 Code :
e1
Radiation Hardening :
No
RoHS Status :
ROHS3 Compliant
Collector Emitter Breakdown Voltage :
60V
Packaging :
Tube
Transistor Element Material :
SILICON
Base Part Number :
BD897
Current - Collector Cutoff (Max) :
500μA
Number of Elements :
1
Collector Emitter Saturation Voltage :
2.5V
Case Connection :
COLLECTOR
Operating Temperature :
-65°C~150°C TJ
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 4A 3V
Emitter Base Voltage (VEBO) :
5V
Number of Terminations :
3
Transistor Application :
SWITCHING
JESD-30 Code :
R-PSFM-T3
Max Power Dissipation :
2W
Max Collector Current :
8A
Published :
1993
Element Configuration :
Single
Mounting Type :
Through Hole
Terminal Finish :
TIN SILVER COPPER
Collector Emitter Voltage (VCEO) :
60V
Power - Max :
2W
Mount :
Through Hole
Polarity :
NPN
Transistor Type :
NPN - Darlington
Collector Base Voltage (VCBO) :
60V
Package / Case :
TO-220-3
JEDEC-95 Code :
TO-220AB
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Datasheets
BD897A-S
Introducing Transistors - Bipolar (BJT) - Single Bourns, Inc. BD897A-S from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:BD897, Operating Temperature:-65°C~150°C TJ, Number of Terminations:3, Mounting Type:Through Hole, Package / Case:TO-220-3, BD897A-S pinout, BD897A-S datasheet PDF, BD897A-S amp .Beyond Transistors - Bipolar (BJT) - Single Bourns, Inc. BD897A-S ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Bourns, Inc. BD897A-S


NPN - Darlington -65°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole

BD897A-S Overview


In this device, the DC current gain is 750 @ 4A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 2.5V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 2.8V @ 16mA, 4A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.Maximum collector currents can be below 8A volts.

BD897A-S Features


the DC current gain for this device is 750 @ 4A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.8V @ 16mA, 4A
the emitter base voltage is kept at 5V


BD897A-S Applications


There are a lot of Bourns Inc.
BD897A-S applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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