BD711

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Mfr.Part #
BD711
Manufacturer
STMicroelectronics
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 100V 12A TO220
Stock
11,727
In Stock :
11,727

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
Collector Emitter Breakdown Voltage :
100V
ECCN Code :
EAR99
Emitter Base Voltage (VEBO) :
5V
Transistor Type :
NPN
JEDEC-95 Code :
TO-220AB
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Polarity/Channel Type :
NPN
Collector Emitter Saturation Voltage :
1V
Collector Emitter Voltage (VCEO) :
100V
VCEsat-Max :
1 V
Collector Base Voltage (VCBO) :
100V
Base Part Number :
BD711
Element Configuration :
Single
Number of Pins :
3
Number of Elements :
1
Frequency :
3MHz
Terminal Finish :
Matte Tin (Sn)
RoHS Status :
ROHS3 Compliant
REACH SVHC :
No SVHC
Vce Saturation (Max) @ Ib, Ic :
1V @ 400mA, 4A
Weight :
4.535924g
Transistor Element Material :
SILICON
Current - Collector Cutoff (Max) :
100mA
Power Dissipation :
75W
Number of Terminations :
3
Operating Temperature :
150°C TJ
Package / Case :
TO-220-3
Radiation Hardening :
No
Packaging :
Tube
JESD-609 Code :
e3
Mount :
Through Hole
DC Current Gain (hFE) (Min) @ Ic, Vce :
15 @ 4A 4V
Height :
9.15mm
Max Collector Current :
12A
Transistor Application :
SWITCHING
Transition Frequency :
3MHz
hFE Min :
40
Max Power Dissipation :
75W
Gain Bandwidth Product :
3MHz
Length :
10.4mm
Mounting Type :
Through Hole
Pin Count :
3
Pbfree Code :
yes
Width :
4.6mm
Datasheets
BD711
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics BD711 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:BD711, Number of Pins:3, Number of Terminations:3, Operating Temperature:150°C TJ, Package / Case:TO-220-3, Mounting Type:Through Hole, BD711 pinout, BD711 datasheet PDF, BD711 amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics BD711 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics BD711


NPN 150°C TJ 100mA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

BD711 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 15 @ 4A 4V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.When VCE saturation is 1V @ 400mA, 4A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 3MHz.A maximum collector current of 12A volts can be achieved.

BD711 Features


the DC current gain for this device is 15 @ 4A 4V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 4A
the emitter base voltage is kept at 5V
a transition frequency of 3MHz


BD711 Applications


There are a lot of STMicroelectronics
BD711 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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