BD711
- Mfr.Part #
- BD711
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 100V 12A TO220
- Stock
- 11,727
- In Stock :
- 11,727
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 100V
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Type :
- NPN
- JEDEC-95 Code :
- TO-220AB
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- NPN
- Collector Emitter Saturation Voltage :
- 1V
- Collector Emitter Voltage (VCEO) :
- 100V
- VCEsat-Max :
- 1 V
- Collector Base Voltage (VCBO) :
- 100V
- Base Part Number :
- BD711
- Element Configuration :
- Single
- Number of Pins :
- 3
- Number of Elements :
- 1
- Frequency :
- 3MHz
- Terminal Finish :
- Matte Tin (Sn)
- RoHS Status :
- ROHS3 Compliant
- REACH SVHC :
- No SVHC
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 400mA, 4A
- Weight :
- 4.535924g
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 100mA
- Power Dissipation :
- 75W
- Number of Terminations :
- 3
- Operating Temperature :
- 150°C TJ
- Package / Case :
- TO-220-3
- Radiation Hardening :
- No
- Packaging :
- Tube
- JESD-609 Code :
- e3
- Mount :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 4A 4V
- Height :
- 9.15mm
- Max Collector Current :
- 12A
- Transistor Application :
- SWITCHING
- Transition Frequency :
- 3MHz
- hFE Min :
- 40
- Max Power Dissipation :
- 75W
- Gain Bandwidth Product :
- 3MHz
- Length :
- 10.4mm
- Mounting Type :
- Through Hole
- Pin Count :
- 3
- Pbfree Code :
- yes
- Width :
- 4.6mm
- Datasheets
- BD711

NPN 150°C TJ 100mA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
BD711 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 15 @ 4A 4V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.When VCE saturation is 1V @ 400mA, 4A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 3MHz.A maximum collector current of 12A volts can be achieved.
BD711 Features
the DC current gain for this device is 15 @ 4A 4V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 4A
the emitter base voltage is kept at 5V
a transition frequency of 3MHz
BD711 Applications
There are a lot of STMicroelectronics
BD711 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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