BD711

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Mfr.Part #
BD711
Manufacturer
STMicroelectronics
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 100V 12A TO220
Stock
11,727
In Stock :
11,727

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
Gain Bandwidth Product :
3MHz
Width :
4.6mm
Pin Count :
3
Terminal Finish :
Matte Tin (Sn)
Vce Saturation (Max) @ Ib, Ic :
1V @ 400mA, 4A
Height :
9.15mm
Max Collector Current :
12A
Collector Emitter Voltage (VCEO) :
100V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transition Frequency :
3MHz
Transistor Element Material :
SILICON
Transistor Type :
NPN
Base Part Number :
BD711
REACH SVHC :
No SVHC
Operating Temperature :
150°C TJ
Number of Pins :
3
Pbfree Code :
yes
JEDEC-95 Code :
TO-220AB
Collector Emitter Saturation Voltage :
1V
Package / Case :
TO-220-3
Weight :
4.535924g
Mounting Type :
Through Hole
Element Configuration :
Single
JESD-609 Code :
e3
Emitter Base Voltage (VEBO) :
5V
Power Dissipation :
75W
Polarity/Channel Type :
NPN
RoHS Status :
ROHS3 Compliant
Radiation Hardening :
No
Length :
10.4mm
hFE Min :
40
Number of Elements :
1
DC Current Gain (hFE) (Min) @ Ic, Vce :
15 @ 4A 4V
Transistor Application :
SWITCHING
Frequency :
3MHz
Max Power Dissipation :
75W
ECCN Code :
EAR99
Current - Collector Cutoff (Max) :
100mA
Collector Base Voltage (VCBO) :
100V
Packaging :
Tube
Mount :
Through Hole
VCEsat-Max :
1 V
Number of Terminations :
3
Collector Emitter Breakdown Voltage :
100V
Datasheets
BD711
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics BD711 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:BD711, Operating Temperature:150°C TJ, Number of Pins:3, Package / Case:TO-220-3, Mounting Type:Through Hole, Number of Terminations:3, BD711 pinout, BD711 datasheet PDF, BD711 amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics BD711 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics BD711


NPN 150°C TJ 100mA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

BD711 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 15 @ 4A 4V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.When VCE saturation is 1V @ 400mA, 4A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 3MHz.A maximum collector current of 12A volts can be achieved.

BD711 Features


the DC current gain for this device is 15 @ 4A 4V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 4A
the emitter base voltage is kept at 5V
a transition frequency of 3MHz


BD711 Applications


There are a lot of STMicroelectronics
BD711 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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