BD711
- Mfr.Part #
- BD711
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 100V 12A TO220
- Stock
- 11,727
- In Stock :
- 11,727
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Gain Bandwidth Product :
- 3MHz
- Width :
- 4.6mm
- Pin Count :
- 3
- Terminal Finish :
- Matte Tin (Sn)
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 400mA, 4A
- Height :
- 9.15mm
- Max Collector Current :
- 12A
- Collector Emitter Voltage (VCEO) :
- 100V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 3MHz
- Transistor Element Material :
- SILICON
- Transistor Type :
- NPN
- Base Part Number :
- BD711
- REACH SVHC :
- No SVHC
- Operating Temperature :
- 150°C TJ
- Number of Pins :
- 3
- Pbfree Code :
- yes
- JEDEC-95 Code :
- TO-220AB
- Collector Emitter Saturation Voltage :
- 1V
- Package / Case :
- TO-220-3
- Weight :
- 4.535924g
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- 5V
- Power Dissipation :
- 75W
- Polarity/Channel Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Length :
- 10.4mm
- hFE Min :
- 40
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 4A 4V
- Transistor Application :
- SWITCHING
- Frequency :
- 3MHz
- Max Power Dissipation :
- 75W
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 100mA
- Collector Base Voltage (VCBO) :
- 100V
- Packaging :
- Tube
- Mount :
- Through Hole
- VCEsat-Max :
- 1 V
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 100V
- Datasheets
- BD711

NPN 150°C TJ 100mA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
BD711 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 15 @ 4A 4V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.When VCE saturation is 1V @ 400mA, 4A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 3MHz.A maximum collector current of 12A volts can be achieved.
BD711 Features
the DC current gain for this device is 15 @ 4A 4V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 4A
the emitter base voltage is kept at 5V
a transition frequency of 3MHz
BD711 Applications
There are a lot of STMicroelectronics
BD711 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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