BD711

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Mfr.Part #
BD711
Manufacturer
STMicroelectronics
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 100V 12A TO220
Stock
11,727
In Stock :
11,727

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
Number of Pins :
3
Frequency :
3MHz
Element Configuration :
Single
Collector Emitter Voltage (VCEO) :
100V
Weight :
4.535924g
Max Collector Current :
12A
Base Part Number :
BD711
Height :
9.15mm
Operating Temperature :
150°C TJ
Collector Base Voltage (VCBO) :
100V
Number of Elements :
1
Pin Count :
3
Width :
4.6mm
Radiation Hardening :
No
JEDEC-95 Code :
TO-220AB
Current - Collector Cutoff (Max) :
100mA
Polarity/Channel Type :
NPN
JESD-609 Code :
e3
Gain Bandwidth Product :
3MHz
Vce Saturation (Max) @ Ib, Ic :
1V @ 400mA, 4A
Mount :
Through Hole
Mounting Type :
Through Hole
Transistor Type :
NPN
VCEsat-Max :
1 V
Packaging :
Tube
Terminal Finish :
Matte Tin (Sn)
Transition Frequency :
3MHz
Emitter Base Voltage (VEBO) :
5V
Number of Terminations :
3
REACH SVHC :
No SVHC
Collector Emitter Saturation Voltage :
1V
Collector Emitter Breakdown Voltage :
100V
Transistor Element Material :
SILICON
Length :
10.4mm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
TO-220-3
Power Dissipation :
75W
Transistor Application :
SWITCHING
Max Power Dissipation :
75W
RoHS Status :
ROHS3 Compliant
Pbfree Code :
yes
ECCN Code :
EAR99
hFE Min :
40
DC Current Gain (hFE) (Min) @ Ic, Vce :
15 @ 4A 4V
Datasheets
BD711
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics BD711 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Base Part Number:BD711, Operating Temperature:150°C TJ, Mounting Type:Through Hole, Number of Terminations:3, Package / Case:TO-220-3, BD711 pinout, BD711 datasheet PDF, BD711 amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics BD711 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics BD711


NPN 150°C TJ 100mA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

BD711 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 15 @ 4A 4V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.When VCE saturation is 1V @ 400mA, 4A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 3MHz.A maximum collector current of 12A volts can be achieved.

BD711 Features


the DC current gain for this device is 15 @ 4A 4V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 4A
the emitter base voltage is kept at 5V
a transition frequency of 3MHz


BD711 Applications


There are a lot of STMicroelectronics
BD711 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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