BD711
- Mfr.Part #
- BD711
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 100V 12A TO220
- Stock
- 11,727
- In Stock :
- 11,727
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- Frequency :
- 3MHz
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 100V
- Weight :
- 4.535924g
- Max Collector Current :
- 12A
- Base Part Number :
- BD711
- Height :
- 9.15mm
- Operating Temperature :
- 150°C TJ
- Collector Base Voltage (VCBO) :
- 100V
- Number of Elements :
- 1
- Pin Count :
- 3
- Width :
- 4.6mm
- Radiation Hardening :
- No
- JEDEC-95 Code :
- TO-220AB
- Current - Collector Cutoff (Max) :
- 100mA
- Polarity/Channel Type :
- NPN
- JESD-609 Code :
- e3
- Gain Bandwidth Product :
- 3MHz
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 400mA, 4A
- Mount :
- Through Hole
- Mounting Type :
- Through Hole
- Transistor Type :
- NPN
- VCEsat-Max :
- 1 V
- Packaging :
- Tube
- Terminal Finish :
- Matte Tin (Sn)
- Transition Frequency :
- 3MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Terminations :
- 3
- REACH SVHC :
- No SVHC
- Collector Emitter Saturation Voltage :
- 1V
- Collector Emitter Breakdown Voltage :
- 100V
- Transistor Element Material :
- SILICON
- Length :
- 10.4mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-220-3
- Power Dissipation :
- 75W
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 75W
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- hFE Min :
- 40
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 4A 4V
- Datasheets
- BD711

NPN 150°C TJ 100mA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
BD711 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 15 @ 4A 4V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.When VCE saturation is 1V @ 400mA, 4A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 3MHz.A maximum collector current of 12A volts can be achieved.
BD711 Features
the DC current gain for this device is 15 @ 4A 4V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 4A
the emitter base voltage is kept at 5V
a transition frequency of 3MHz
BD711 Applications
There are a lot of STMicroelectronics
BD711 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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