BD679AS
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- Mfr.Part #
- BD679AS
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 4A TO126-3
- Stock
- 5,621
- In Stock ：
- 5,621
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Weight :
- 760.986249mg
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Through Hole
- Current Rating :
- 4A
- Collector Emitter Breakdown Voltage :
- 80V
- Voltage :
- 80V
- Mounting Type :
- Through Hole
- Transition Frequency :
- 10MHz
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- hFE Min :
- 750
- Max Power Dissipation :
- 40W
- ECCN Code :
- EAR99
- Published :
- 2000
- Current - Collector Cutoff (Max) :
- 500μA
- Transistor Application :
- SWITCHING
- Contact Plating :
- Tin
- Packaging :
- Bulk
- Lead Free :
- Lead Free
- Operating Temperature :
- 150°C TJ
- Power Dissipation :
- 40W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 2A 3V
- Pbfree Code :
- yes
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Current :
- 2A
- Package / Case :
- TO-225AA, TO-126-3
- Collector Emitter Saturation Voltage :
- 2.8V
- Continuous Collector Current :
- 4A
- Collector Emitter Voltage (VCEO) :
- 80V
- Collector Base Voltage (VCBO) :
- 80V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Element Configuration :
- Single
- Polarity :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 2.8V @ 40mA, 2A
- Factory Lead Time :
- 2 Weeks
- REACH SVHC :
- No SVHC
- Base Part Number :
- BD679
- Max Collector Current :
- 4A
- Transistor Type :
- NPN - Darlington
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- Voltage - Rated DC :
- 80V
- Datasheets
- BD679AS
NPN - Darlington 150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Bulk Through Hole
BD679AS Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 750 @ 2A 3V.With a collector emitter saturation voltage of 2.8V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2.8V @ 40mA, 2A.In order to achieve high efficiency, the continuous collector voltage should be kept at 4A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 4A.A transition frequency of 10MHz is present in the part.Collector current can be as low as 4A volts at its maximum.
BD679AS Features
the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2.8V
the vce saturation(Max) is 2.8V @ 40mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 10MHz
BD679AS Applications
There are a lot of ON Semiconductor
BD679AS applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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