BD677ASTU
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- Mfr.Part #
- BD677ASTU
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 60V 4A TO126-3
- Stock
- 505
- In Stock ：
- 505
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 500μA
- Collector Emitter Saturation Voltage :
- 2.8V
- Element Configuration :
- Single
- hFE Min :
- 750
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Max Power Dissipation :
- 40W
- Collector Base Voltage (VCBO) :
- 60V
- Transistor Application :
- SWITCHING
- Continuous Collector Current :
- 4A
- Max Collector Current :
- 4A
- Contact Plating :
- Tin
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Lead Free :
- Lead Free
- Qualification Status :
- Not Qualified
- Voltage - Rated DC :
- 60V
- Transition Frequency :
- 10MHz
- Collector Emitter Breakdown Voltage :
- 60V
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- 5V
- Power Dissipation :
- 40W
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 60V
- Polarity :
- NPN
- Transistor Type :
- NPN - Darlington
- Published :
- 2000
- Package / Case :
- TO-225AA, TO-126-3
- Vce Saturation (Max) @ Ib, Ic :
- 2.8V @ 40mA, 2A
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 2A 3V
- Pbfree Code :
- yes
- Current Rating :
- 4A
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- BD677
- Packaging :
- Tube
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mounting Type :
- Through Hole
- Weight :
- 761mg
- Number of Elements :
- 1
- Operating Temperature :
- 150°C TJ
- Datasheets
- BD677ASTU
NPN - Darlington 150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Tube Through Hole
BD677ASTU Overview
This device has a DC current gain of 750 @ 2A 3V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2.8V.A VCE saturation (Max) of 2.8V @ 40mA, 2A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 4A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 4A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 10MHz.A maximum collector current of 4A volts is possible.
BD677ASTU Features
the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2.8V
the vce saturation(Max) is 2.8V @ 40mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 10MHz
BD677ASTU Applications
There are a lot of ON Semiconductor
BD677ASTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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