BCX71GE6327HTSA1
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- Mfr.Part #
- BCX71GE6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A SOT23
- Stock
- 35,732
- In Stock ：
- 35,732
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Base Part Number :
- BCX71
- Collector Emitter Breakdown Voltage :
- 45V
- Halogen Free :
- Not Halogen Free
- Max Power Dissipation :
- 330mW
- Voltage - Rated DC :
- -45V
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Max Collector Current :
- 100mA
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- -45V
- Collector Emitter Saturation Voltage :
- -550mV
- Collector Emitter Voltage (VCEO) :
- 550mV
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 2mA 5V
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e3
- Power Dissipation :
- 330mW
- hFE Min :
- 120
- Transition Frequency :
- 250MHz
- Gain Bandwidth Product :
- 250MHz
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Published :
- 2011
- Pbfree Code :
- yes
- Weight :
- 30mg
- Transistor Application :
- SWITCHING
- Frequency :
- 250MHz
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Vce Saturation (Max) @ Ib, Ic :
- 550mV @ 1.25mA, 50mA
- Current Rating :
- -100mA
- Transistor Type :
- PNP
- Operating Temperature :
- 150°C TJ
- Terminal Position :
- Dual
- Polarity/Channel Type :
- PNP
- Terminal Form :
- Gull wing
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Emitter Base Voltage (VEBO) :
- -5V
- Lead Free :
- Lead Free
- Mounting Type :
- Surface Mount
- Contact Plating :
- Tin
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- BCX71GE6327HTSA1
PNP 150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCX71GE6327HTSA1 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 2mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -550mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 550mV @ 1.25mA, 50mA.The emitter base voltage can be kept at -5V for high efficiency.The current rating of this fuse is -100mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 250MHz.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
BCX71GE6327HTSA1 Features
the DC current gain for this device is 120 @ 2mA 5V
a collector emitter saturation voltage of -550mV
the vce saturation(Max) is 550mV @ 1.25mA, 50mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
a transition frequency of 250MHz
BCX71GE6327HTSA1 Applications
There are a lot of Infineon Technologies
BCX71GE6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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