BCP49E6327HTSA1
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- Mfr.Part #
- BCP49E6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN DARL 60V 0.5A SOT223-4
- Stock
- 55,179
- In Stock ：
- 55,179
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 1.5W
- Terminal Position :
- Dual
- Emitter Base Voltage (VEBO) :
- 10V
- Max Collector Current :
- 500mA
- RoHS Status :
- RoHS Compliant
- Number of Terminations :
- 4
- Number of Pins :
- 4
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 60V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Case Connection :
- COLLECTOR
- Collector Base Voltage (VCBO) :
- 80V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 200MHz
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- NPN - Darlington
- Operating Temperature :
- 150°C TJ
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- hFE Min :
- 10000
- Package / Case :
- TO-261-4, TO-261AA
- Terminal Form :
- Gull wing
- Polarity :
- NPN
- Base Part Number :
- BCP49
- Published :
- 2007
- Mount :
- Surface Mount
- Frequency - Transition :
- 200MHz
- Radiation Hardening :
- No
- Power - Max :
- 1.5W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10000 @ 100mA 5V
- Collector Emitter Saturation Voltage :
- 1V
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 100μA, 100mA
- Collector Emitter Voltage (VCEO) :
- 60V
- Datasheets
- BCP49E6327HTSA1
NPN - Darlington 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BCP49E6327HTSA1 Overview
This device has a DC current gain of 10000 @ 100mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1V.A VCE saturation (Max) of 1V @ 100μA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 10V.As you can see, the part has a transition frequency of 200MHz.A maximum collector current of 500mA volts is possible.
BCP49E6327HTSA1 Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 100μA, 100mA
the emitter base voltage is kept at 10V
a transition frequency of 200MHz
BCP49E6327HTSA1 Applications
There are a lot of Infineon Technologies
BCP49E6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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