BCM857BS,115

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Power Dissipation :

300mW

Collector Emitter Voltage (VCEO) :

-45V

Max Collector Current :

100mA

Peak Reflow Temperature (Cel) :

260

Element Configuration :

Dual

Number of Elements :

2

Height :

1mm

Max Breakdown Voltage :

45V

Package / Case :

6-TSSOP, SC-88, SOT-363

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 100mA

Frequency :

175MHz

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Polarity :

PNP

Collector Base Voltage (VCBO) :

50V

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Published :

2009

Operating Temperature :

150°C TJ

Terminal Form :

Gull wing

Max Power Dissipation :

300mW

Transistor Application :

AMPLIFIER

Lead Free :

Lead Free

Number of Pins :

6

Radiation Hardening :

No

Test Current :

5mA

Transistor Type :

2 PNP (Dual) Matched Pair

Emitter Base Voltage (VEBO) :

5V

Pin Count :

6

REACH SVHC :

No SVHC

Length :

2.2mm

Current - Collector Cutoff (Max) :

15nA ICBO

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Collector Emitter Breakdown Voltage :

-45V

Voltage :

45V

Zener Voltage :

39V

Number of Terminations :

6

Contact Plating :

Tin

Transition Frequency :

175MHz

Current - Collector (Ic) (Max) :

100mA

Factory Lead Time :

4 Weeks

Tolerance :

5%

Gain Bandwidth Product :

175MHz

Collector Emitter Saturation Voltage :

400mV

Time@Peak Reflow Temperature-Max (s) :

40

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 5V

Width :

1.35mm

Current :

1A

Base Part Number :

BCM857