BCM847DS,115

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Peak Reflow Temperature (Cel) :

260

Published :

2008

Number of Elements :

2

Packaging :

Tape and Reel (TR)

Transistor Type :

2 NPN (Dual) Matched Pair

Frequency :

250MHz

Polarity :

NPN

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

30

Factory Lead Time :

4 Weeks

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 5V

Mount :

Surface Mount

Max Power Dissipation :

380mW

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Operating Temperature :

150°C TJ

Pin Count :

6

Transistor Application :

AMPLIFIER

Max Collector Current :

100mA

Terminal Form :

Gull wing

Current - Collector Cutoff (Max) :

15nA ICBO

Package / Case :

SC-74, SOT-457

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 100mA

Case Connection :

Isolated

Max Breakdown Voltage :

45V

Terminal Finish :

Tin (Sn)

Emitter Base Voltage (VEBO) :

6V

Collector Emitter Breakdown Voltage :

45V

Number of Terminations :

6

Number of Pins :

6

Collector Base Voltage (VCBO) :

50V

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Dual

Base Part Number :

BCM847

Gain Bandwidth Product :

250MHz

Mounting Type :

Surface Mount

Collector Emitter Voltage (VCEO) :

45V

Radiation Hardening :

No

Transition Frequency :

250MHz

Power Dissipation :

380mW