BC818K40E6327HTSA1
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- Mfr.Part #
- BC818K40E6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 25V 0.5A SOT23
- Stock
- 12,716
- In Stock ：
- 12,716
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- Frequency :
- 170MHz
- Collector Emitter Voltage (VCEO) :
- 700mV
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 5V
- Max Collector Current :
- 500mA
- Max Breakdown Voltage :
- 25V
- Contact Plating :
- Tin
- Height :
- 900μm
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Terminal Form :
- Gull wing
- Power Dissipation :
- 500mW
- Collector Emitter Breakdown Voltage :
- 25V
- Halogen Free :
- Not Halogen Free
- Collector Base Voltage (VCBO) :
- 30V
- Mount :
- Surface Mount
- Base Part Number :
- BC818
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 2.9mm
- Polarity/Channel Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Width :
- 1.3mm
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- 700mV
- Max Power Dissipation :
- 500mW
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100mA 1V
- Transistor Type :
- NPN
- Transistor Application :
- AMPLIFIER
- Lead Free :
- Lead Free
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Packaging :
- Tape and Reel (TR)
- Transition Frequency :
- 170MHz
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Position :
- Dual
- Operating Temperature :
- 150°C TJ
- Published :
- 2011
- Datasheets
- BC818K40E6327HTSA1
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC818K40E6327HTSA1 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 250 @ 100mA 1V.The collector emitter saturation voltage is 700mV, which allows for maximum design flexibility.When VCE saturation is 700mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 170MHz.This device can take an input voltage of 25V volts before it breaks down.A maximum collector current of 500mA volts can be achieved.
BC818K40E6327HTSA1 Features
the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 170MHz
BC818K40E6327HTSA1 Applications
There are a lot of Infineon Technologies
BC818K40E6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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