BC81816MTF
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- Mfr.Part #
- BC81816MTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 25V 0.8A SOT23-3
- Stock
- 9,000
- In Stock ：
- 9,000
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency :
- 100MHz
- Collector Emitter Voltage (VCEO) :
- 25V
- Width :
- 1.3mm
- Max Collector Current :
- 800mA
- JESD-609 Code :
- e3
- Base Part Number :
- BC818
- Mount :
- Surface Mount
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Gain Bandwidth Product :
- 100MHz
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Type :
- NPN
- Weight :
- 30mg
- Transistor Application :
- SWITCHING
- hFE Min :
- 100
- Collector Base Voltage (VCBO) :
- 30V
- Collector Emitter Saturation Voltage :
- 700mV
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Power Dissipation :
- 310mW
- Number of Terminations :
- 3
- Mounting Type :
- Surface Mount
- Contact Plating :
- Tin
- Factory Lead Time :
- 6 Weeks
- Terminal Form :
- Gull wing
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- 150°C TJ
- Published :
- 2008
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 100mA 1V
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- RoHS Status :
- RoHS Compliant
- Max Power Dissipation :
- 310mW
- Current - Collector Cutoff (Max) :
- 100nA
- Terminal Position :
- Dual
- Element Configuration :
- Single
- Polarity/Channel Type :
- NPN
- Transition Frequency :
- 100MHz
- Height :
- 930μm
- Collector Emitter Breakdown Voltage :
- 25V
- Max Breakdown Voltage :
- 25V
- Length :
- 2.9mm
- Pbfree Code :
- yes
- Datasheets
- BC81816MTF
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC81816MTF Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 110 @ 100mA 1V DC current gain.As it features a collector emitter saturation voltage of 700mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 25V volts.When collector current reaches its maximum, it can reach 800mA volts.
BC81816MTF Features
the DC current gain for this device is 110 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC81816MTF Applications
There are a lot of ON Semiconductor
BC81816MTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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