BC817K40E6327HTSA1
- Mfr.Part #
- BC817K40E6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.5A SOT23
- Stock
- 177,778
- In Stock :
- 177,778
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Width :
- 1.3mm
- Operating Temperature :
- 150°C TJ
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Breakdown Voltage :
- 45V
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Halogen Free :
- Not Halogen Free
- Number of Terminations :
- 3
- Terminal Position :
- Dual
- Max Collector Current :
- 500mA
- Element Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- Height :
- 900μm
- Transition Frequency :
- 170MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100mA 1V
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Terminal Finish :
- Tin (Sn)
- Base Part Number :
- BC817
- Frequency :
- 170MHz
- Collector Base Voltage (VCBO) :
- 50V
- Collector Emitter Saturation Voltage :
- 700mV
- Transistor Type :
- NPN
- Transistor Application :
- AMPLIFIER
- Polarity/Channel Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- Power Dissipation :
- 330mW
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- ECCN Code :
- EAR99
- Power - Max :
- 500mW
- Mounting Type :
- Surface Mount
- Published :
- 2002
- Emitter Base Voltage (VEBO) :
- 5V
- Terminal Form :
- Gull wing
- Collector Emitter Voltage (VCEO) :
- 700mV
- Length :
- 2.9mm
- Collector Emitter Breakdown Voltage :
- 45V
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 500mW
- Datasheets
- BC817K40E6327HTSA1

NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC817K40E6327HTSA1 Overview
In this device, the DC current gain is 250 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 700mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 700mV @ 50mA, 500mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.170MHz is present in the transition frequency.An input voltage of 45V volts is the breakdown voltage.Maximum collector currents can be below 500mA volts.
BC817K40E6327HTSA1 Features
the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 170MHz
BC817K40E6327HTSA1 Applications
There are a lot of Infineon Technologies
BC817K40E6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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