BC81740MTF
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- Mfr.Part #
- BC81740MTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.8A SOT23-3
- Stock
- 158,716
- In Stock ：
- 158,716
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- BC817
- Collector Emitter Saturation Voltage :
- 700mV
- Max Collector Current :
- 800mA
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 13 Weeks
- Operating Temperature :
- 150°C TJ
- Current - Collector Cutoff (Max) :
- 100nA
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- Packaging :
- Tape and Reel (TR)
- Emitter Base Voltage (VEBO) :
- 5V
- Published :
- 2004
- Weight :
- 30mg
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100mA 1V
- Contact Plating :
- Tin
- Power Dissipation :
- 310mW
- REACH SVHC :
- No SVHC
- Polarity/Channel Type :
- NPN
- JESD-609 Code :
- e3
- Width :
- 1.3mm
- RoHS Status :
- RoHS Compliant
- Frequency :
- 100MHz
- Mounting Type :
- Surface Mount
- Max Breakdown Voltage :
- 45V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 5 days ago)
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- Pbfree Code :
- yes
- Max Power Dissipation :
- 310mW
- Mount :
- Surface Mount
- Element Configuration :
- Single
- hFE Min :
- 60
- Transition Frequency :
- 100MHz
- Number of Terminations :
- 3
- Length :
- 2.9mm
- ECCN Code :
- EAR99
- Max Junction Temperature (Tj) :
- 150°C
- Terminal Position :
- Dual
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 45V
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 50V
- Height :
- 1.2mm
- Gain Bandwidth Product :
- 100MHz
- Collector Emitter Voltage (VCEO) :
- 45V
- Datasheets
- BC81740MTF
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC81740MTF Overview
In this device, the DC current gain is 250 @ 100mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 700mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 700mV @ 50mA, 500mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 45V volts.Single BJT transistor is possible for the collector current to fall as low as 800mA volts at Single BJT transistors maximum.
BC81740MTF Features
the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC81740MTF Applications
There are a lot of ON Semiconductor
BC81740MTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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