BC817-40LT3G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Emitter Base Voltage (VEBO) :

5V

Max Collector Current :

500mA

Terminal Position :

Dual

Published :

2007

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vce Saturation (Max) @ Ib, Ic :

700mV @ 50mA, 500mA

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Voltage (VCEO) :

45V

Collector Base Voltage (VCBO) :

50V

Polarity/Channel Type :

NPN

Pbfree Code :

yes

hFE Min :

250

Radiation Hardening :

No

Terminal Form :

Gull wing

Max Breakdown Voltage :

45V

Mounting Type :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Max Power Dissipation :

300mW

Pin Count :

3

Package / Case :

TO-236-3, SC-59, SOT-23-3

Length :

2.9mm

Operating Temperature :

-65°C~150°C TJ

Element Configuration :

Single

ECCN Code :

EAR99

Collector Emitter Saturation Voltage :

700mV

Transistor Element Material :

SILICON

DC Current Gain (hFE) (Min) @ Ic, Vce :

250 @ 100mA 1V

Halogen Free :

Halogen Free

Number of Terminations :

3

Contact Plating :

Tin

Frequency :

100MHz

RoHS Status :

ROHS3 Compliant

Gain Bandwidth Product :

100MHz

Current - Collector Cutoff (Max) :

100nA ICBO

Width :

1.3mm

Base Part Number :

BC817

Number of Pins :

3

Number of Elements :

1

JESD-609 Code :

e3

Transistor Type :

NPN

Power Dissipation :

300mW

Lead Free :

Lead Free

REACH SVHC :

No SVHC

Factory Lead Time :

10 Weeks

Height :

940μm

Transition Frequency :

100MHz

Surface Mount :

yes

Collector Emitter Breakdown Voltage :

45V

Packaging :

Tape and Reel (TR)