BC817-40LT3G
- Mfr.Part #
- BC817-40LT3G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.5A SOT23-3
- Stock
- 4,749
- In Stock :
- 4,749
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Width :
- 1.3mm
- REACH SVHC :
- No SVHC
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 45V
- Number of Terminations :
- 3
- Height :
- 940μm
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2007
- Element Configuration :
- Single
- Number of Pins :
- 3
- hFE Min :
- 250
- Terminal Form :
- Gull wing
- Frequency :
- 100MHz
- Halogen Free :
- Halogen Free
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Terminal Position :
- Dual
- JESD-609 Code :
- e3
- Transistor Type :
- NPN
- Max Collector Current :
- 500mA
- Power Dissipation :
- 300mW
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Length :
- 2.9mm
- Transition Frequency :
- 100MHz
- Base Part Number :
- BC817
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Pin Count :
- 3
- Polarity/Channel Type :
- NPN
- Max Power Dissipation :
- 300mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100mA 1V
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- 700mV
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Gain Bandwidth Product :
- 100MHz
- Collector Base Voltage (VCBO) :
- 50V
- Operating Temperature :
- -65°C~150°C TJ
- Max Breakdown Voltage :
- 45V
- Contact Plating :
- Tin
- Surface Mount :
- yes
- Factory Lead Time :
- 10 Weeks
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 45V
- Packaging :
- Tape and Reel (TR)
- Peak Reflow Temperature (Cel) :
- 260
- Pbfree Code :
- yes
- Datasheets
- BC817-40LT3G

NPN -65°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC817-40LT3G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 250 @ 100mA 1V.The collector emitter saturation voltage is 700mV, which allows for maximum design flexibility.When VCE saturation is 700mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 100MHz.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 500mA volts can be achieved.
BC817-40LT3G Features
the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC817-40LT3G Applications
There are a lot of ON Semiconductor
BC817-40LT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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