BC817-25
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- Mfr.Part #
- BC817-25
- Manufacturer
- Diotec Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.8A SOT23-3
- Stock
- 33,018
- In Stock ：
- 33,018
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- Manufacturer :
- Diotec Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -65°C~150°C TJ
- Current - Collector Cutoff (Max) :
- 100nA
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Current - Collector (Ic) (Max) :
- 500mA
- Peak Reflow Temperature (Cel) :
- 260
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Terminal Form :
- Gull wing
- JESD-609 Code :
- e3
- Gain Bandwidth Product :
- 100MHz
- Collector Emitter Voltage (VCEO) :
- 45V
- Collector Emitter Breakdown Voltage :
- 45V
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Pin Count :
- 3
- Collector Emitter Saturation Voltage :
- 700mV
- Number of Elements :
- 1
- Height :
- 1mm
- Element Configuration :
- Single
- Series :
- Automotive, AEC-Q101
- RoHS Status :
- ROHS3 Compliant
- Width :
- 1.4mm
- Transistor Application :
- SWITCHING
- REACH SVHC :
- No SVHC
- Mount :
- Surface Mount
- Terminal Position :
- Dual
- Emitter Base Voltage (VEBO) :
- 5V
- Frequency :
- 100MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- Length :
- 3.05mm
- Power Dissipation :
- 350mW
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Contact Plating :
- Tin
- Max Power Dissipation :
- 310mW
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Type :
- NPN
- Published :
- 2008
- Weight :
- 7.994566mg
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Collector Base Voltage (VCBO) :
- 50V
- Additional Feature :
- High Reliability
- Factory Lead Time :
- 19 Weeks
- Max Collector Current :
- 800mA
- Radiation Hardening :
- No
- Max Breakdown Voltage :
- 150V
- Transition Frequency :
- 100MHz
- Polarity/Channel Type :
- NPN
- Lead Free :
- Lead Free
- Base Part Number :
- BC817
- Datasheets
- BC817-25
NPN -65°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC817-25-7-F Overview
DC current gain in this device equals 160 @ 100mA 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 700mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 700mV @ 50mA, 500mA.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 150V volts.In extreme cases, the collector current can be as low as 800mA volts.
BC817-25-7-F Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC817-25-7-F Applications
There are a lot of Diodes Incorporated
BC817-25-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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