BC817-25,235
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- Mfr.Part #
- BC817-25,235
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANSISTOR NPN 500MA 45V SOT23
- Stock
- 80,218
- In Stock ：
- 80,218
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- NPN
- VCEsat-Max :
- 0.7 V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- Operating Temperature :
- 150°C TJ
- Voltage - Collector Emitter Breakdown (Max) :
- 45V
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Frequency - Transition :
- 100MHz
- Current - Collector (Ic) (Max) :
- 500mA
- Terminal Finish :
- Tin (Sn)
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Configuration :
- Single
- Terminal Position :
- Dual
- Surface Mount :
- yes
- Polarity/Channel Type :
- NPN
- Factory Lead Time :
- 4 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- Automotive, AEC-Q101
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transition Frequency :
- 100MHz
- RoHS Status :
- ROHS3 Compliant
- Qualification Status :
- Not Qualified
- Terminal Form :
- Gull wing
- Number of Pins :
- 3
- Published :
- 2009
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Base Part Number :
- BC817
- Number of Terminations :
- 3
- Pin Count :
- 3
- Power - Max :
- 250mW
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Datasheets
- BC817-25,235
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC817-25,235 Overview
In this device, the DC current gain is 160 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 700mV @ 50mA, 500mA.100MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 45V.
BC817-25,235 Features
the DC current gain for this device is 160 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
a transition frequency of 100MHz
BC817-25,235 Applications
There are a lot of Nexperia USA Inc.
BC817-25,235 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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