BC817,235
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- Mfr.Part #
- BC817,235
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANSISTOR NPN 500MA 45V SOT23
- Stock
- 1,706,896
- In Stock ：
- 1,706,896
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- Number of Terminations :
- 3
- Published :
- 2009
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Collector Base Voltage (VCBO) :
- 50V
- Gain Bandwidth Product :
- 100MHz
- Terminal Form :
- Gull wing
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 100MHz
- Base Part Number :
- BC817
- Mounting Type :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 45V
- Polarity/Channel Type :
- NPN
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Power Dissipation :
- 250mW
- Transistor Type :
- NPN
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Factory Lead Time :
- 4 Weeks
- Max Breakdown Voltage :
- 45V
- Power Dissipation :
- 250mW
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Contact Plating :
- Tin
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Mount :
- Surface Mount
- Operating Temperature :
- 150°C TJ
- Current :
- 5A
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Peak Reflow Temperature (Cel) :
- 260
- Voltage :
- 45V
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Pins :
- 3
- Frequency :
- 100MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Terminal Position :
- Dual
- Max Collector Current :
- 500mA
- Collector Emitter Voltage (VCEO) :
- 45V
- Series :
- Automotive, AEC-Q101
- Datasheets
- BC817,235
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC817,235 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 100mA 1V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 45V volts.When collector current reaches its maximum, it can reach 500mA volts.
BC817,235 Features
the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC817,235 Applications
There are a lot of Nexperia USA Inc.
BC817,235 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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