BC817,235
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- Mfr.Part #
- BC817,235
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANSISTOR NPN 500MA 45V SOT23
- Stock
- 1,706,896
- In Stock ：
- 1,706,896
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- Transistor Application :
- SWITCHING
- Emitter Base Voltage (VEBO) :
- 5V
- Max Collector Current :
- 500mA
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Emitter Voltage (VCEO) :
- 45V
- Operating Temperature :
- 150°C TJ
- Transistor Element Material :
- SILICON
- Series :
- Automotive, AEC-Q101
- Published :
- 2009
- Collector Emitter Breakdown Voltage :
- 45V
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Mount :
- Surface Mount
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Max Power Dissipation :
- 250mW
- Contact Plating :
- Tin
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Terminal Position :
- Dual
- Packaging :
- Tape and Reel (TR)
- Collector Base Voltage (VCBO) :
- 50V
- Pin Count :
- 3
- Factory Lead Time :
- 4 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Transition Frequency :
- 100MHz
- Frequency :
- 100MHz
- Voltage :
- 45V
- Base Part Number :
- BC817
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Terminal Form :
- Gull wing
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Type :
- NPN
- Mounting Type :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Gain Bandwidth Product :
- 100MHz
- Current :
- 5A
- Max Breakdown Voltage :
- 45V
- Polarity/Channel Type :
- NPN
- Power Dissipation :
- 250mW
- Datasheets
- BC817,235
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC817,235 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 100mA 1V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 45V volts.When collector current reaches its maximum, it can reach 500mA volts.
BC817,235 Features
the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC817,235 Applications
There are a lot of Nexperia USA Inc.
BC817,235 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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