BC817,235

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 100mA 1V

Gain Bandwidth Product :

100MHz

Packaging :

Tape and Reel (TR)

Vce Saturation (Max) @ Ib, Ic :

700mV @ 50mA, 500mA

Base Part Number :

BC817

Transistor Element Material :

SILICON

Frequency :

100MHz

Collector Base Voltage (VCBO) :

50V

Terminal Position :

Dual

Max Collector Current :

500mA

Collector Emitter Voltage (VCEO) :

45V

Radiation Hardening :

No

Collector Emitter Breakdown Voltage :

45V

Number of Terminations :

3

Current :

5A

RoHS Status :

ROHS3 Compliant

Contact Plating :

Tin

Number of Elements :

1

Mounting Type :

Surface Mount

Power Dissipation :

250mW

JESD-609 Code :

e3

Max Power Dissipation :

250mW

Element Configuration :

Single

Emitter Base Voltage (VEBO) :

5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Max Breakdown Voltage :

45V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Terminal Form :

Gull wing

Number of Pins :

3

Transition Frequency :

100MHz

Current - Collector Cutoff (Max) :

100nA ICBO

Factory Lead Time :

4 Weeks

Transistor Type :

NPN

Pin Count :

3

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

30

Series :

Automotive, AEC-Q101

Published :

2009

Voltage :

45V

ECCN Code :

EAR99

Operating Temperature :

150°C TJ

Peak Reflow Temperature (Cel) :

260

Polarity/Channel Type :

NPN