BC817,235
- Mfr.Part #
- BC817,235
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.5A TO236AB
- Stock
- 1,706,896
- In Stock :
- 1,706,896
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- 150°C TJ
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 5V
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 3
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Transistor Type :
- NPN
- ECCN Code :
- EAR99
- Published :
- 2009
- Number of Terminations :
- 3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Series :
- Automotive, AEC-Q101
- Frequency :
- 100MHz
- Transition Frequency :
- 100MHz
- Base Part Number :
- BC817
- Pin Count :
- 3
- Number of Elements :
- 1
- Voltage :
- 45V
- Max Collector Current :
- 500mA
- Mount :
- Surface Mount
- Factory Lead Time :
- 4 Weeks
- Collector Emitter Breakdown Voltage :
- 45V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Max Power Dissipation :
- 250mW
- Terminal Form :
- Gull wing
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Voltage (VCEO) :
- 45V
- Transistor Application :
- SWITCHING
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Current :
- 5A
- Max Breakdown Voltage :
- 45V
- Terminal Position :
- Dual
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Gain Bandwidth Product :
- 100MHz
- Contact Plating :
- Tin
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Polarity/Channel Type :
- NPN
- Power Dissipation :
- 250mW
- Collector Base Voltage (VCBO) :
- 50V
- Datasheets
- BC817,235

NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC817,235 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 100mA 1V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 45V volts.When collector current reaches its maximum, it can reach 500mA volts.
BC817,235 Features
the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC817,235 Applications
There are a lot of Nexperia USA Inc.
BC817,235 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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