BC808-40LT1G
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- Mfr.Part #
- BC808-40LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 25V 0.5A SOT23-3
- Stock
- 9,049
- In Stock ：
- 9,049
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Supplier Device Package :
- SOT-23-3 (TO-236)
- Packaging :
- Tape and Reel (TR)
- Voltage - Collector Emitter Breakdown (Max) :
- 25V
- Current - Collector (Ic) (Max) :
- 500mA
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Power - Max :
- 300mW
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100mA 1V
- RoHS Status :
- ROHS3 Compliant
- Frequency - Transition :
- 100MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transistor Type :
- PNP
- Datasheets
- BC808-40LT1G
PNP -55°C~150°C TJ 100nA ICBO TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC808-40LT1G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 250 @ 100mA 1V.When VCE saturation is 700mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Supplier package SOT-23-3 (TO-236) contains the product.The device has a 25V maximal voltage - Collector Emitter Breakdown.
BC808-40LT1G Features
the DC current gain for this device is 250 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the supplier device package of SOT-23-3 (TO-236)
BC808-40LT1G Applications
There are a lot of Rochester Electronics, LLC
BC808-40LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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