BC80716MTF
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- Mfr.Part #
- BC80716MTF
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.8A SOT23-3
- Stock
- 3,438
- In Stock ：
- 3,438
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Terminal Form :
- Gull wing
- Collector Base Voltage (VCBO) :
- -50V
- Length :
- 2.9mm
- Transistor Type :
- PNP
- Collector Emitter Breakdown Voltage :
- 45V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Max Collector Current :
- 800mA
- Number of Terminations :
- 3
- Factory Lead Time :
- 6 Weeks
- Gain Bandwidth Product :
- 100MHz
- Number of Pins :
- 3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Lead Free :
- Lead Free
- Weight :
- 30mg
- hFE Min :
- 100
- Mount :
- Surface Mount
- Max Breakdown Voltage :
- 45V
- Terminal Position :
- Dual
- Radiation Hardening :
- No
- Max Power Dissipation :
- 310mW
- Polarity/Channel Type :
- PNP
- Width :
- 1.3mm
- Collector Emitter Saturation Voltage :
- -700mV
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- -5V
- Transition Frequency :
- 100MHz
- RoHS Status :
- RoHS Compliant
- Transistor Application :
- SWITCHING
- Height :
- 970μm
- Base Part Number :
- BC807
- Packaging :
- Tape and Reel (TR)
- Frequency :
- 100MHz
- Collector Emitter Voltage (VCEO) :
- 45V
- JESD-609 Code :
- e3
- Power Dissipation :
- 310mW
- Published :
- 2002
- Current - Collector Cutoff (Max) :
- 100nA
- Contact Plating :
- Tin
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 5 days ago)
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- Datasheets
- BC80716MTF
PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC80716MTF Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 100mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -700mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 45V volts.During maximum operation, collector current can be as low as 800mA volts.
BC80716MTF Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
a transition frequency of 100MHz
BC80716MTF Applications
There are a lot of ON Semiconductor
BC80716MTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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