BC807-25W,115
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- Mfr.Part #
- BC807-25W,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANSISTOR PNP 500MA 45V SOT323
- Stock
- 263,081
- In Stock ：
- 263,081
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- PNP
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Breakdown Voltage :
- 45V
- Base Part Number :
- BC807
- Mount :
- Surface Mount
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C TJ
- Series :
- Automotive, AEC-Q101
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- VCEsat-Max :
- 0.7 V
- Emitter Base Voltage (VEBO) :
- 5V
- Peak Reflow Temperature (Cel) :
- 260
- Length :
- 2.2mm
- Max Collector Current :
- 500mA
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- ECCN Code :
- EAR99
- Power Dissipation :
- 200mW
- Collector Emitter Breakdown Voltage :
- 45V
- Packaging :
- Tape and Reel (TR)
- Pin Count :
- 3
- Height :
- 1mm
- Element Configuration :
- Single
- Transistor Type :
- PNP
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 45V
- Package / Case :
- SC-70, SOT-323
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- Factory Lead Time :
- 4 Weeks
- Frequency :
- 80MHz
- Transition Frequency :
- 100MHz
- Collector Emitter Saturation Voltage :
- 700mV
- Terminal Position :
- Dual
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- Terminal Form :
- Gull wing
- Published :
- 1999
- Gain Bandwidth Product :
- 80MHz
- Collector Base Voltage (VCBO) :
- 50V
- Width :
- 1.35mm
- REACH SVHC :
- No SVHC
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Contact Plating :
- Tin
- Datasheets
- BC807-25W,115
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC807-25W,115 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 160 @ 100mA 1V DC current gain.As it features a collector emitter saturation voltage of 700mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 45V volts.When collector current reaches its maximum, it can reach 500mA volts.
BC807-25W,115 Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC807-25W,115 Applications
There are a lot of Nexperia USA Inc.
BC807-25W,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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