BC807-25,215
- Mfr.Part #
- BC807-25,215
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANSISTOR PNP 500MA 45V SOT23
- Stock
- 800,324
- In Stock :
- 800,324
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transition Frequency :
- 100MHz
- Collector Emitter Saturation Voltage :
- -700mV
- Pin Count :
- 3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Voltage (VCEO) :
- -45V
- ECCN Code :
- EAR99
- Terminal Position :
- Dual
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Current - Collector (Ic) (Max) :
- 500mA
- Power Dissipation :
- 250mW
- Polarity/Channel Type :
- PNP
- Operating Temperature :
- 150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Element Material :
- SILICON
- Max Junction Temperature (Tj) :
- 150°C
- Mounting Type :
- Surface Mount
- Series :
- Automotive, AEC-Q101
- Surface Mount :
- yes
- Number of Pins :
- 3
- Factory Lead Time :
- 4 Weeks
- Number of Elements :
- 1
- Ambient Temperature Range High :
- 150°C
- Terminal Form :
- Gull wing
- Transistor Application :
- SWITCHING
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- hFE Min :
- 40
- Collector Emitter Breakdown Voltage :
- -45V
- VCEsat-Max :
- 0.7 V
- Emitter Base Voltage (VEBO) :
- -5V
- Collector Base Voltage (VCBO) :
- -50V
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2009
- JESD-609 Code :
- e3
- Height :
- 1.1mm
- Packaging :
- Tape and Reel (TR)
- Max Collector Current :
- -500mA
- Number of Terminations :
- 3
- Transistor Type :
- PNP
- Frequency - Transition :
- 80MHz
- Peak Reflow Temperature (Cel) :
- 260
- Voltage - Collector Emitter Breakdown (Max) :
- 45V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Qualification Status :
- Not Qualified
- Base Part Number :
- BC807
- Configuration :
- Single
- Datasheets
- BC807-25,215
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC807-25,215 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 160 @ 100mA 1V.The collector emitter saturation voltage is -700mV, which allows for maximum design flexibility.When VCE saturation is 700mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -5V can achieve high levels of efficiency.In the part, the transition frequency is 100MHz.The device has a 45V maximal voltage - Collector Emitter Breakdown.A maximum collector current of -500mA volts can be achieved.
BC807-25,215 Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
a transition frequency of 100MHz
BC807-25,215 Applications
There are a lot of Nexperia USA Inc.
BC807-25,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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