BC549CTA
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- Mfr.Part #
- BC549CTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.1A TO92-3
- Stock
- 50,233
- In Stock ：
- 50,233
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- 5V
- Weight :
- 240mg
- Collector Emitter Breakdown Voltage :
- 30V
- Collector Emitter Saturation Voltage :
- 250mV
- Packaging :
- Tape and Box (TB)
- Max Breakdown Voltage :
- 30V
- REACH SVHC :
- No SVHC
- Number of Terminations :
- 3
- Terminal Position :
- BOTTOM
- Transition Frequency :
- 300MHz
- Width :
- 3.86mm
- RoHS Status :
- ROHS3 Compliant
- Current Rating :
- 100mA
- Frequency :
- 300MHz
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Lead Free :
- Lead Free
- Power Dissipation :
- 500mW
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 30V
- Polarity/Channel Type :
- NPN
- Height :
- 4.58mm
- Number of Pins :
- 3
- Published :
- 2007
- Transistor Type :
- NPN
- Mounting Type :
- Through Hole
- Voltage - Rated DC :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Mount :
- Through Hole
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Max Power Dissipation :
- 500mW
- Max Collector Current :
- 100mA
- Operating Temperature :
- 150°C TJ
- Factory Lead Time :
- 7 Weeks
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 30V
- Contact Plating :
- Tin
- Base Part Number :
- BC549
- Gain Bandwidth Product :
- 300MHz
- hFE Min :
- 110
- Length :
- 4.58mm
- Datasheets
- BC549CTA
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC549CTA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 420 @ 2mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 250mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 300MHz.Single BJT transistor can take a breakdown input voltage of 30V volts.During maximum operation, collector current can be as low as 100mA volts.
BC549CTA Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 300MHz
BC549CTA Applications
There are a lot of ON Semiconductor
BC549CTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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