BC549CTA
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- Mfr.Part #
- BC549CTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.1A TO92-3
- Stock
- 50,233
- In Stock ：
- 50,233
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Factory Lead Time :
- 7 Weeks
- Max Collector Current :
- 100mA
- Max Power Dissipation :
- 500mW
- Lead Free :
- Lead Free
- Current Rating :
- 100mA
- Mounting Type :
- Through Hole
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Operating Temperature :
- 150°C TJ
- Number of Terminations :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Transistor Application :
- SWITCHING
- Mount :
- Through Hole
- Radiation Hardening :
- No
- Collector Emitter Saturation Voltage :
- 250mV
- JESD-609 Code :
- e3
- Terminal Position :
- BOTTOM
- Transistor Type :
- NPN
- Polarity/Channel Type :
- NPN
- Weight :
- 240mg
- Pbfree Code :
- yes
- Voltage - Rated DC :
- 30V
- Width :
- 3.86mm
- Collector Emitter Voltage (VCEO) :
- 30V
- Collector Emitter Breakdown Voltage :
- 30V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 300MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 30V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Max Breakdown Voltage :
- 30V
- Number of Pins :
- 3
- Packaging :
- Tape and Box (TB)
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Elements :
- 1
- Frequency :
- 300MHz
- Contact Plating :
- Tin
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- REACH SVHC :
- No SVHC
- Published :
- 2007
- Element Configuration :
- Single
- Gain Bandwidth Product :
- 300MHz
- hFE Min :
- 110
- Length :
- 4.58mm
- Height :
- 4.58mm
- Base Part Number :
- BC549
- Power Dissipation :
- 500mW
- Datasheets
- BC549CTA
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC549CTA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 420 @ 2mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 250mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 300MHz.Single BJT transistor can take a breakdown input voltage of 30V volts.During maximum operation, collector current can be as low as 100mA volts.
BC549CTA Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 300MHz
BC549CTA Applications
There are a lot of ON Semiconductor
BC549CTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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